Prof. Filip Tuomisto Profile

Prof. Filip Tuomisto

Professor at Univ of Helsinki

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Publications (11)

Proceedings Article | 15 March 2024 Presentation + Paper

Split and unrelaxed Ga vacancies in β-Ga2O3

F. Tuomisto, I. Zhelezova, I. Makkonen

Proceedings Volume 12887, 1288704 (2024) https://doi.org/10.1117/12.3008560

KEYWORDS: Gallium, Crystals, Anisotropy, Spectroscopy, Doping, Semiconductors, Electrical conductivity

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Proceedings Article | 9 March 2024 Presentation

Fabrication method of GaN-air channels for embedded photonic structures

Marta Sawicka, Greg Muziol, Oliwia Golyga, Natalia Fiuczek, Anna Feduniewicz-Zmuda, Marcin Siekacz, Henryk Turski, Kacper Sierakowski, Tomasz Sochacki, Mateusz Słowikowski, Igor Prozheev, Filip Tuomisto, Czeslaw Skierbiszewski

Proceedings Volume PC12886, PC128860X (2024) https://doi.org/10.1117/12.3001341

KEYWORDS: Fabrication, Refractive index, Electrochemical etching, Diffraction gratings, Silicon, Ion channels, Gallium nitride, Annealing, Semiconductor lasers, Optical lithography

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Proceedings Article | 8 March 2024 Presentation + Paper

Defects in nitride semiconductors as seen by positrons

F. Tuomisto

Proceedings Volume 12886, 1288604 (2024) https://doi.org/10.1117/12.2691931

KEYWORDS: Aluminum, Aluminum gallium nitride, Interfaces, Alloys, Gallium nitride, Semiconductors, Doping

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Proceedings Article | 16 March 2023 Presentation + Paper

Diversity of split Ga vacancies in β-Ga2O3

F. Tuomisto, I. Zhelezova, I. Makkonen

Proceedings Volume 12422, 1242201 (2023) https://doi.org/10.1117/12.2664997

KEYWORDS: Electron positron annihilation, Gallium, Anisotropy, Crystals, Doppler effect, Spectroscopy, Thin films, Hydrogen, Chemical species

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Proceedings Article | 5 March 2021 Presentation + Paper

Split Ga vacancies: abundant defects in beta-Ga2O3

Filip Tuomisto, Antti Karjalainen, Ilja Makkonen

Proceedings Volume 11687, 1168709 (2021) https://doi.org/10.1117/12.2585462

KEYWORDS: Gallium, Anisotropy, Thin films, Spectroscopy, Semiconductors, Oxygen, Nondestructive evaluation, N-type semiconductors, Hydrogen, Gallium nitride

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Proceedings Article | 1 March 2019 Presentation + Paper

Ga vacancies and electrical compensation in β-Ga2O3 thin films studied with positron annihilation spectroscopy

Filip Tuomisto, Antti Karjalainen, Vera Prozheeva, Ilja Makkonen, Gunter Wagner, Michele Baldini

Proceedings Volume 10919, 1091910 (2019) https://doi.org/10.1117/12.2518888

KEYWORDS: Thin films, Spectroscopy, Crystals, Doping, Electrons, Anisotropy

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Proceedings Article | 22 February 2013 Paper

Defects in nitrides, positron annihilation spectroscopy

Filip Tuomisto

Proceedings Volume 8625, 86250G (2013) https://doi.org/10.1117/12.2000251

KEYWORDS: Gallium nitride, Aluminum nitride, Gallium, Indium nitride, Doppler effect, Spectroscopy, Electrons, Aluminum, Picosecond phenomena, Magnesium

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Proceedings Article | 15 February 2008 Paper

Defect and emission distributions in bulk GaN grown in polar and nonpolar directions: a comparative analysis

T. Paskova, A. Hanser, E. Preble, K. Evans, R. Kröger, F. Tuomisto, R. Kersting, R. Alcorn, S. Ashley, C. Pagel, E. Valcheva, P. Paskov, B. Monemar

Proceedings Volume 6894, 68940D (2008) https://doi.org/10.1117/12.767628

KEYWORDS: Gallium nitride, Interfaces, Transmission electron microscopy, Sapphire, Ions, Metalorganic chemical vapor deposition, Gallium, Silicon, Visualization, Reflection

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Proceedings Article | 20 February 2007 Paper

Vacancy defect distributions in bulk ZnO crystals

Filip Tuomisto, David Look

Proceedings Volume 6474, 647413 (2007) https://doi.org/10.1117/12.698902

KEYWORDS: Zinc oxide, Zinc, Crystals, Picosecond phenomena, Temperature metrology, Doppler effect, Spectroscopy, Crystallography, Ions, Physics

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Proceedings Article | 8 February 2007 Paper

Interplay of Ga vacancies, C impurities, and yellow luminescence in GaN

F. Reurings, F. Tuomisto

Proceedings Volume 6473, 64730M (2007) https://doi.org/10.1117/12.698980

KEYWORDS: Gallium, Gallium nitride, Luminescence, Carbon, Electrons, Spectroscopy, Metalorganic chemical vapor deposition, Doppler effect, Sapphire, Chemical species

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Proceedings Article | 8 February 2007 Paper

Defect studies in HVPE GaN by positron annihilation spectroscopy

Filip Tuomisto

Proceedings Volume 6473, 647312 (2007) https://doi.org/10.1117/12.697892

KEYWORDS: Gallium, Gallium nitride, Picosecond phenomena, Oxygen, Temperature metrology, Doppler effect, Spectroscopy, Annealing, Sapphire, Metalorganic chemical vapor deposition

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Showing 5 of 11 publications

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