We prepared the vanadium oxide thin films on Si substrates by magnetron sputtering , using different substrate temperatures, 300℃, 350℃, 400℃. The effects of substrate temperature on film composition, micro morphology, resistance temperature characteristics, TCR (temperature coefficient of resistance) and other thin film characteristics were analyzed by XRD (X-Ray Diffraction), FESEM (Field emission scanning electron microscopy), and four-probe method. Results show that the increase of substrate temperature is conducive to the promotion of V2O5 (101) crystal formation in the films, meanwhile it is beneficial to reduce the gap and improve the uniformity of grain size, so as to increase the density of the films. The variation range of the film resistance was 500~1700 KΩ·cm,200~550 KΩ· cm and 30~160 KΩ· cm when the substrate temperature was 300 ℃ ,350 ℃ and 400 ℃ . With the increase of substrate temperature, the room temperature resistance and high temperature resistance of the thin film are greatly reduced, and the TCR performance has been optimized at the same time. The room temperature TCR of the film is about -2.4%/℃ under 400 ℃ substrate temperature, and the average TCR is about -1.98%/℃ in the process of temperature change.
There are two regular methods to calculate infrared atmospheric transmittance, including empirical formula and professional software. However, it has large deviations to use empirical formula. It is complicated to use professional software and difficult to apply in other infrared simulative system. Therefore, based on measured atmospheric data in some area for many years, article used the method of molecular single absorption to calculate absorption coefficients of water vapor and carbon dioxide in different temperature. Temperatures, pressures, and consequent scattering coefficients which distributed in different high were fitted with analysis formula according to different months. Then, it built simulative calculation model of atmospheric transmittance of infrared radiation. The simulative results are very close to accuracy results calculated by user-defined model of MODTRAN. The method is easy and convenient to use and has certain referent value in the project application.
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