We present state-of-the-art performance of 1.3 μm GaInNAs lasers on GaAs grown by molecular
beam epitaxy. The lowest achieved threshold current density is 297, 150 and 133 A/cm2 per
quantum well (QW) for single, double and triple QW broad area lasers with a cavity length of 1
mm. The characteristic temperature is 93-133 K in the ambient temperature range of 10-80 °C for
broad area lasers depending on the cavity length, and increases to 163-208 K for ridge waveguide
lasers as a result of temperature insensitive lateral carrier diffusion in QWs. The maximum 3 dB
bandwidth of 17 GHz is achieved in a double QW laser. Uncooled 10 Gb/s operation up to 110 °C
has been demonstrated.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.