KEYWORDS: Lithography, Zirconium, Atomic force microscopy, Metals, Coating, Image processing, Electron beam lithography, Oxides, Atomic force microscope, Line edge roughness
New inorganic resist materials based on metal complexes were investigated for atomic force microscope (AFM)
lithography. Phosphoric acids are good for self-assembly because of their strong binding energy. In this work, zirconium
phosphonate system are newly synthesized for spin-coatable materials in aqueous solutions and leads to negative tone
pattern for improving line edge roughness. Low electron exposure by AFM lithography could generate a pattern by
electrochemical reaction and cross-linking of metal-oxo complexes. It has been reported that the minimum pattern results
are affected by lithographic speed, and the applied voltage between a tip and a substrate.
One:one alternating poly(p-trimethylgermylstyrene sulfone)s were obtained by tert- butylhydroperoxide initiated copolymerization of p-trimethylgermylstyrene with sulfur dioxide (SO2) at T < -60 degree(s)C. The molecular weight and polydispersity of the polysulfones were in the range of Mn equals 0.5 approximately 20 X 106 and Mw/Mn equals 1.8 approximately 5, respectively. The temperature of initial decomposition in nitrogen was 196 degree(s)C. Maximum UV absorption ((lambda) max) of the polysulfone was at 228 nm ((epsilon) max equals 16740 1/molcm of monomer unit). The polysulfone was found to be positive acting resists sensitive to x-ray ((lambda) c equals 18.5 angstrom) and electron beam.
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