The paper presents the results of a study of the influence of the geometric parameters of the mathematical model of a photonic-crystal (PhC) direct waveguide, based on thin-film lithium niobate on an insulator, on the optical insertion loss. Based on the obtained model of a direct photonic-crystal waveguide, a model of a photonic-crystal waveguide structure with a 60° bend was built, based on thin-film lithium niobate on an insulator, and the model parameters were optimized using the MMA method according to the principle of identifying the boundaries of air holes as a Bernstein polynomial 1 order followed by "stretching", which made it possible to reduce the insertion optical loss by a factor of 76 of a photoniccrystal waveguide structure with a 60° bend relative to a waveguide with a bend without optimizing the parameters.
An important task in controlling signal reception, transmission, and processing in photonic integrated circuits is to make a specific EM waveform, which is done with polarization convertors. Today, various waveguide structures based on the effects of birefringence and dichroism are used as polarization controllers that control the electromagnetic waveform. This paper presents the structures of symmetric and asymmetric ridge waveguides that allow polarization control based on the birefringence effect; and the waveguide structure with an asymmetrically arranged metal film that allows polarization control based on the plasmon effect; and also the structure of a dichroic circular polarizer based on nanostructures.
The treatise presents the results that allow assessing the impact of the semiconductor-air interface geometry on the PIN diode characteristics. The study describes the semiconductor InGaAs/InAlAs-structure of the PIN photodiode grown on an InP-substrate and presents its topological scheme. For the study, a mathematical model of the PIN photodiode was built that describes the motion of charged particles and their distribution in the structure on the basis of Fermi-Dirac distribution function and the stimulated absorption of the electromagnetic radiation. The calculations yielded the dependence of the diode photoelectric current on the semiconductor-air interface geometry.
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