With the development and progress of society and the acceleration of industry, transportation and urbanization, volatile organic compounds (Volatile Organic Compounds, VOCs) from extensive sources have increasingly prominent effects on the atmospheric environment, and some of them also have irritant, toxic and carcinogenic effects, posing a serious threat to the ecological environment and human health. As the source of energy in the national economy, the petrochemical industry is an important source of man-made VOCs leakage emissions, and has potential huge safety risks. This article reviews the definition of VOCs, source, hazard and traditional leakage detection method, investigate the progress and application of infrared detection technology at home and abroad, infrared detection technology with its non-contact, long distance, high efficiency, wide range, rapid positioning, dynamic intuitive significant advantages, can play an important role in the petrochemical VOCs detection.
Air pollution monitoring is an important aspect of environment preservation, which is of more and more significance in modern society due to the increasing demand of healthy living condition and sustainable development. Infrared (IR) gas imaging is a fast and sensitive way of gas monitoring utilizing the signatures of different gas molecules in absorption spectrum. Our research and development on IR photodetectors based on the InAs/GaSb type-II superlattice (T2SL) material system with a cut-off wavelength beyond long wavelength infrared (LWIR) atmospheric window covering the absorption of sulfur hexafluoride (SF6) around 10.55 μm will be reported. A new detector structure was designed with a reduced bandgap of the absorber, in conjunction with the unipolar barrier and other parts with specific band alignments. The material was grown by molecular beam epitaxy (MBE) with high structural quality. Single element detectors have been fabricated and shown high performances, including low dark current density 1.0 × 10−3 A/cm2 and high resistance 1.0 × 107 Ω for 30 × 30 μm diode at −0.1 V bias, and the surface leakage is also reduced effectively. The LWIR FPA fabrication for SF6 detector is underway
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