Recently discovered ferroelectric nematic liquid crystals (FNLCs) offer the opportunity to make liquid crystalbased, high-speed electro-optic devices. The lack of a center of symmetry combined with having the polar axis oriented parallel to the long, polarizable molecular axis allows for large second-order nonlinear optical susceptibility and therefore a large Pockels effect. The electro-optic response at high frequencies is purely electronic, making possible high-speed modulators with bandwidths limited only by device architecture. Facile and thermodynamically stable alignment of the polar axis over large areas makes FNLCs an attractive alternative to organic crystals and poled polymers, which have been pursued for decades as Pockels materials. A novel methodology for characterizing the electro-optic coefficient (r33) of this new class of Pockels material was developed. Using this methodology, FNLCs engineered to have large nonlinearities were demonstrated to have r33 values approaching that of lithium niobate.
SiOnyx has developed visible and infrared CMOS image sensors leveraging a proprietary ultrafast laser
semiconductor process technology. This technology demonstrates 10 fold improvements in infrared
sensitivity over incumbent imaging technology while maintaining complete compatibility with standard
CMOS image sensor process flows. Furthermore, these sensitivity enhancements are achieved on a focal
plane with state of the art noise performance of 2 electrons/pixel. By capturing light in the visible regime as
well as infrared light from the night glow, this sensor technology provides imaging in daytime through
twilight and into nighttime conditions. The measured 10x quantum efficiency at the critical 1064 nm laser
node enables see spot imaging capabilities in a variety of ambient conditions. The spectral sensitivity is
from 400 to 1200 nm.
SiOnyx has developed infrared enhanced CMOS image sensors leveraging a proprietary ultrafast laser semiconductor process technology. This technology demonstrates 10 fold improvements in infrared sensitivity over incumbent imaging technology while maintaining complete compatibility with standard CMOS image sensor process flows. Furthermore, these sensitivity enhancements are achieved on a focal plane with state of the art noise performance of 2 electrons/pixel. The focal plane is color enabled but high transmission of near infrared light allows for near infrared imaging from 850 to 1200 as well. The quantum efficiency enhancements have significant performance benefits in imaging 1064nm laser light as well as 850nm imaging of iris signatures for improved biometric identification.
SiOnyx has developed a CMOS image sensor with enhanced infrared sensitivity. The technology deployed in this
remarkable device is based on SiOnyx's proprietary ultrafast laser semiconductor process. We have established a high
volume manufacturing process while maintaining complete compatibility with standard CMOS image sensor process flows.
The enhanced performance proves the viability of a highly scalable low cost digital infrared sensor. The spectral sensitivity
is from 400 to 1200 nm with measured quantum efficiency improvements of more than 3x at 940 nm.
SiOnyx has developed a novel silicon processing technology for CMOS sensors that will extend spectral sensitivity into the
near/shortwave infrared (NIR/SWIR) and enable a full performance digital night vision capability comparable to that of
current image-intensifier based night vision goggles. The process is compatible with established CMOS manufacturing
infrastructure and has the promise of much lower cost than competing approaches. The measured thin layer quantum
efficiency is as much as 10x that of incumbent imaging sensors with spectral sensitivity from 400 to 1200 nm.
SiOnyx has developed a novel silicon processing technology for CMOS sensors that will extend spectral
sensitivity into the near/shortwave infrared (NIR/SWIR) and enable a full performance digital night vision
capability comparable to that of current image-intensifier based night vision goggles. The process is
compatible with established CMOS manufacturing infrastructure and has the promise of much lower cost
than competing approaches. The measured thin layer quantum efficiency is as much as 10x that of
incumbent imaging sensors with spectral sensitivity from 400 to 1200 nm.
Supercontinuum based sources and measurement techniques are developed, enabling optical ultra-broadband studies of nano-scale photonic crystal devices and integrated photonic circuits over 1.2 - 2.0 micron wavelength range. Experiments involving 1-D periodic photonic crystal microcavity waveguides and 3-D periodic photonic crystals with embedded point defects are described. Experimental findings are compared with rigorous electromagnetic simulations.
In this paper, we describe the design theory for the supercontinuum spectrum generation in an optical fiber. To generate a wideband supercontinuum spectrum, the balance between fiber nonlinearity and the amount of group velocity dispersion is important. Secondly, the experimental results of supercontinuum generation are shown. A few kinds of optical fibers such as a highly nonlinear dispersion-shifted fiber and a highly nonlinear bismuth-oxide fiber are tested. Finally several applications of supercontinuum light are described. We demonstrate multi-wavelength light source, wavelength conversion, multiplexing format conversion, and optical characterization using a supercontinuum light source.
Bismuth oxide-based erbium-doped fiber amplifiers (Bi-EDFAs) are attractive because of their broad gain bandwidth and high gain per unit length. In this paper, several applications of broadband bismuth oxide-based erbium-doped fiber lasers (Bi-EDFLs) are reviewed including a wideband tunable single frequency Bi-EDFL, a femtosecond passively mode-locked Bi-EDFL, and applications to broadband spectrum generation.
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