The potential of terahertz technology has been clearly demonstrated by its large applications in security and defence
(remote detection of object). A flexible alternative monochromatic millimeter wave system coupled with an original
infrared temperature sensor has been developed to visualize large size 3D manufactured opaque phantoms with different
refractive index contrasts. The results clearly illustrate applied terahertz tomography particularities such as boundary
effects, refraction and diffraction losses that must be prevented for efficient inspection and detection.
The fast development of nitrides has given the opportunity to investigate AlGaN as a material for ultraviolet detection.
Such camera present an intrinsic spectral selectivity and an extremely low dark current at room temperature. It can
compete with technologies based on photocathodes, MCP intensifiers, back thinned CCD or hybrid CMOS focal plane
arrays (FPA) for low flux measurements. AlGaN based cameras allow UV imaging without filters or with simplified
ones in harsh solar blind conditions. Few results on camera have been shown in the last years, but the ultimate
performances of AlGaN photodiodes couldn't be achieved due to parasitic illumination of multiplexers, responsivity of p
layers in p-i-n structures, or use of cooled readout circuit. Such issues have prevented up to now a large development of
this technology. We present results on focal plane array of 320x256 pixels with a pitch of 30μm for which Schottky
photodiodes are multiplexed with a readout circuit protected by black matrix at room temperature. Theses focal plane
present a peak reponsivity around 280nm and 310nm with a rejection of visible light of four decades only limited by
internal photoemission in contact. Then we will show the capability to outdoor measurements. The noise figure is due to
readout noise of the multiplexer and we will investigate the ultimate capabilities of Schottky diodes or Metal-
Semiconductor-Metal (MSM) technologies to detect extremely low signal. Furthermore, we will consider deep UV
measurements on single pixels MSM from 32nm to 61nm in a front side illumination configuration. Finally, we will
define technology process allowing backside illumination and deep UV imaging.
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