Sn-doped ZnO thin film was prepared to enhance its photoelectric performance, and the ZnO based photodetector was fabricated by co-sputtering method. The I-V characteristic of the detector under different Sn doped DC sputtering power, the ultraviolet light source was set at 365 nm with 0.5 mW power. The examined photodetector performance manifest that optimum Sn doping level is investigated at 15 W, the maximum photocurrent and spectral responsivity are obtained to be 4.39 mA and 24.4 A/W, the fastest time response is obtained to be tr=29.0 ms and tf =33.2 ms.
An experiment system of maskless lithography has been presented using the characteristics of digital micro-mirror
device (DMD) and principle of light refraction and diffraction. The experiment system contains a worked lamp-house, a
DMD controlled by computer and an imaging system. The main parameter of devices, such as the incident and reflected
light on DMD by selection of optimal optical devices and realizes process of exposure have been designed. In this paper,
the particular characteristics of this system were described and some preliminary experimental results were discussed in
finally. With this system, the realizable rate of reduction projecting is 14; the minimum precision is 1.3μm. It avoids the
process of replacement mask and subsequent problems, and simplifies operation process, improves overlay accuracy,
shortens production cycle of IC, and greatly decreases production cost. It is convenient to actualize the process of
exposal and optional to replace the digital mask. These can provide possibility for maskless lithography being further
improved.
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