II-VI semiconductors can exhibit strong photoluminescence throughout the visible spectrum and are excellent candidates
for filling the so-called "green gap". We report on the performance of green color-converted LEDs fabricated by bonding
CdMgZnSe multiple quantum well structures to high-efficiency blue-emitting GaInN LEDs. A device efficacy of 181
lm/W at 537 nm (dominant) is measured under room temperature, 350 mA/mm2 quasi-cw conditions, more than twice as
efficient as typical commercial green LEDs today. The thermal roll-off is shown to be comparable to that of typical
green GaInN LEDs. Finally, the implications of the availability of high-efficiency, narrow-band, green and yellow
emitters in display applications will be discussed.
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