An optical switching fabric based on resonant optoelectronic switches is presented. The elements are comprised
of two optoelectronic thyristors which have their own switching characteristic. Simultaneous switching of 40Gbps
baseband data along with mm-wave optical signals is shown in a 4x4 fabric. The possible unique capabilities and
performance advantages of implementation with thyristor-based switches in the fabric are discussed.
Intersubband absorption is reported in a new modulation doped structure using strained InGaAs quantum wells
(QWs) that support transistor operation. Well defined absorption peaks (1000 cm-1 to 1700 cm-1) from 8μm to 11.5μm
have been obtained using either n- or p- type modulation doped wells. The absorption wavelength may be extended to as
low as 3.2μm by using quantum dots placed within the quantum well. Both n and p well responses show strong
polarization dependence with maximum values at incident angles of 65-70° and peak positions which are adjusted by the
quantum well parameters. The p well shows a double peaked response with a peak separation of about 1.5μm which
results from heavy and light hole contributions. A thyristor infrared detector model has been established based upon the
intersubband absorption mechanism and simulation results are shown.
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