Mr. John C. Connolly Profile

John C. Connolly

President & CEO at Innovative Photonic Solutions

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Author

Publications (20)

Proceedings Article | 29 April 2010 Paper

Compact diode laser homodyne vibrometers

Christian Grund, Harald Guenther, John Connolly

Proceedings Volume 7684, 76840V (2010) https://doi.org/10.1117/12.850591

KEYWORDS: Sensors, Homodyne detection, Signal to noise ratio, Semiconductor lasers, Signal detection, Heterodyning, Modulation, Signal processing, Telescopes, Optical fabrication

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Proceedings Article | 22 February 2006 Paper

Hybrid ECL/DBR wavelength and spectrum stabilized lasers demonstrate high power and narrow spectral linewidth

Scott Rudder, John Connolly, Gregory Steckman

Proceedings Volume 6101, 61010I (2006) https://doi.org/10.1117/12.646791

KEYWORDS: Semiconductor lasers, Manufacturing, Laser stabilization, Fiber lasers, Raman spectroscopy, Glasses, Fiber coupled lasers, Fiber Bragg gratings, Optical filters, Laser development

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Proceedings Article | 4 March 2004 Paper

Advanced high-power superluminescent light sources for environmental, chemical, and biological sensing applications

Mikhail Maiorov, Chia-Fu Hsu, Igor Kudryashov, Alexander Lunev, Nancy Morris, Robert Roff, John Connolly, Dmitri Garbuzov

Proceedings Volume 5270, (2004) https://doi.org/10.1117/12.515108

KEYWORDS: Waveguides, Modulation, Reflectivity, Light sources, Environmental sensing, Biosensing, Superluminescent diodes, Coating, Quantum wells, Solids

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Proceedings Article | 22 May 2002 Paper

High-power 1300-nm Fabry-Perot and DFB ridge-waveguide lasers

Dmitri Garbuzov, Mikhail Maiorov, Raymond Menna, Anatoly Komissarov, V. Khalfin, Igor Kudryashov, Alexander Lunev, Louis DiMarco, John Connolly

Proceedings Volume 4651, (2002) https://doi.org/10.1117/12.467937

KEYWORDS: Fabry–Perot interferometers, High power lasers, Temperature metrology, Semiconductor lasers, Waveguides, Heatsinks, Fiber lasers, Fiber couplers, Raman spectroscopy, Optical amplifiers

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Proceedings Article | 18 April 2000 Paper

Type-II mid-infrared lasers

Jerry Meyer, William Bewley, Igor Vurgaftman, Christopher Felix, Linda Olafsen, Edward Aifer, Donna Stokes, Ming Yang, Hao Lee, Raymond Menna, Ramon Martinelli, Dmitri Garbuzov, John Connolly, Mikhail Maiorov, Alan Sugg, Gregory Olsen

Proceedings Volume 3947, (2000) https://doi.org/10.1117/12.382087

KEYWORDS: Mid-IR, Continuous wave operation, Quantum wells, Optical pumping, Semiconductor lasers, Laser optics, Pulsed laser operation, Absorption, Electrons

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Proceedings Article | 30 November 1999 Paper

New room temperature CW InGaAsSb/AlGaAsSb QW ridge diode lasers and their application to CO measurements near 2.3 um

Mikhail Maiorov, Jian Wang, Douglas Baer, Hao Lee, Gregory Belenky, Ronald Hanson, John Connolly, Dmitri Garbuzov

Proceedings Volume 3855, (1999) https://doi.org/10.1117/12.371275

KEYWORDS: Quantum wells, Semiconductor lasers, Carbon monoxide, Gas lasers, Continuous wave operation, Absorption, Indium gallium arsenide antimonide, Temperature metrology, Combustion, Switching

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In this work the spectral characteristics of a new type of mid-infrared diode laser are discussed and an application for CO trace gas detection is demonstrated. The InGaAsSb/AlGaAsSb QW diode lasers operating in the spectral range of 2.0 - 2.7 micrometer in continuous wave (CW) regime at room temperature (RT) were developed last year. Earlier, the spectral range of RT CW operation for diode lasers was limited by 2.0 - 2.1 micrometer. The extension of wavelength to 2.7 micrometer was achieved for InGaAsSb/AlGaAsSb quantum well (QW) lasers by employing for QWs new quasi-ternary InGaSb(As) compositions that are out of the miscibility gap for InGaAsSb materials. Single spatial mode ridge lasers emitting at 2.2 - 2.7 micrometer have parameters similar to those of the infrared lasers with (lambda) less than 2 micrometer widely used for spectroscopic application. At operating currents about 80 - 200 mA and temperatures up to +50 degrees Celsius, these lasers emit CW output power of several milliwatts. Investigation of the laser spectra has revealed the current and temperature ranges where a single longitudinal mode dominates with side mode suppression of 22 - 25 dB. The dominant mode can be tuned in wavelength by varying current or temperature. The lasers were used to record high-resolution CO absorption lineshapes (2v band near 2.3 micrometer) in a static cell (14.9-cm path). Probed CO transitions were selected for applications to in situ measurements in high- temperature combustion flows. In general, the measured CO absorption lineshapes agreed with theoretical Voigt profiles calculated using the HITRAN database to within 2%. For a minimum detectable absorbance of 0.01% and a 1-meter long path, the CO measurement sensitivity for the probed R30 transition near 2.302 micrometer was 5 - 10 ppm at 1000 K. This value is about two orders of magnitude better than the sensitivity reported for CO detection with conventional diode lasers that probe transitions in the 3v band near 1.56 micrometer.

Proceedings Article | 6 August 1999 Paper

Super-high-power operation of 0.98-um InGaAs(P)/InGaP/GaAs-broadened waveguide separate confinement heterostructure quantum well diode lasers

Dmitri Garbuzov, Mikhail Maiorov, V. Khalfin, Maria Harvey, A. Al-Muhanna, Luke Mawst, Dan Botez, John Connolly

Proceedings Volume 3625, (1999) https://doi.org/10.1117/12.356942

KEYWORDS: Temperature metrology, Copper, Waveguides, Solids, Quantum wells, Semiconductor lasers, Heatsinks, Resistance, Continuous wave operation

Proceedings Article | 1 April 1999 Paper

Optically pumped mid-infrared type-II lasers: advances in high-temperature performance

Christopher Felix, William Bewley, Edward Aifer, Igor Vurgaftman, Linda Olafsen, Donna Stokes, Jerry Meyer, Ming Yang, Hao Lee, Ramon Martinelli, John Connolly, Alan Sugg, Gregory Olsen

Proceedings Volume 3628, (1999) https://doi.org/10.1117/12.344539

KEYWORDS: Continuous wave operation, Pulsed laser operation, Optical pumping, Mid-IR, Semiconductor lasers, Laser damage threshold, Sensors, Laser optics, Nickel

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Proceedings Article | 1 April 1999 Paper

2.3- to 2.7-um room-temperature cw operation of InGaAsSb/AlGaAsSb broad-contact and single-mode ridge-waveguide SCH-QW diode lasers

Dmitri Garbuzov, Raymond Menna, Mikhail Maiorov, Hao Lee, V. Khalfin, Louis DiMarco, David Capewell, Ramon Martinelli, Gregory Belenky, John Connolly

Proceedings Volume 3628, (1999) https://doi.org/10.1117/12.344538

KEYWORDS: Quantum wells, Continuous wave operation, Semiconductor lasers, Laser damage threshold, Temperature metrology, Waveguides, Pulsed laser operation, Waveguide lasers, Laser based displays

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Proceedings Article | 7 April 1998 Paper

High-power broadened-waveguide InGaAsSb/AlGaAsSb quantum well diode lasers emitting at 2 um

Raymond Menna, Dmitri Garbuzov, Hao Lee, Ramon Martinelli, S. Yegna Narayan, John Connolly

Proceedings Volume 3284, (1998) https://doi.org/10.1117/12.304450

KEYWORDS: Semiconductor lasers, Continuous wave operation, Quantum wells, Waveguides, High power lasers, Cladding, Diodes, Laser countermeasures, Laser damage threshold, Indium gallium arsenide antimonide

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Proceedings Article | 21 October 1996 Paper

Tunable single-frequency III-V semiconductor diode lasers with wavelengths from 0.76 to 2.7 um

Ramon Martinelli, Raymond Menna, Pamela York, Dmitri Garbuzov, Hao Lee, Joseph Abeles, Nancy Morris, John Connolly, S. Yegna Narayan, Jacobus Vermaak, Gregory Olsen, David Cooper, Clinton Carlisle, Haris Riris, Anthony Cook

Proceedings Volume 2834, (1996) https://doi.org/10.1117/12.255311

KEYWORDS: Semiconductor lasers, Absorption, Quantum wells, Laser spectroscopy, Laser development, Mid-IR, Gallium arsenide, Modulation, Spectroscopy, Diodes

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Proceedings Article | 21 October 1996 Paper

Temperature modulation of near-infrared distributed feedback diode lasers for gas sensing

Jacobus Vermaak, Gregory Olsen, E. Argueta, E. Mykietyn, Ramon Martinelli, Raymond Menna, John Connolly

Proceedings Volume 2834, (1996) https://doi.org/10.1117/12.255319

KEYWORDS: Modulation, Absorption, Semiconductor lasers, Temperature metrology, Sensors, Diodes, Gas lasers, Frequency modulation, Spectroscopy, Fermium

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Proceedings Article | 8 May 1996 Paper

Ultrafast semiconductor laser diode seeded Cr:LiSAF regenerative amplifier system

Peter Delfyett, A. Yusim, Steve Grantham, Kai Gaebel, Sangyoun Gee, Martin Richardson, Gerard Alphonse, John Connolly

Proceedings Volume 2701, (1996) https://doi.org/10.1117/12.239727

KEYWORDS: Semiconductor lasers, Optical amplifiers, Laser systems engineering, Ultrafast phenomena, Semiconductors, Diodes, Systems modeling, Laser optics, High power lasers, Oscillators

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Proceedings Article | 12 April 1996 Paper

Folded-cavity surface-emitting distributed feedback 1.39-um wavelength InGaAsP/InP laser diodes for gas-sensing applications

Chih-Ping Chao, Dmitri Garbuzov, Stephen Forrest, Ramon Martinelli, Raymond Menna, Maria Harvey, Louis DiMarco, John Connolly

Proceedings Volume 2682, (1996) https://doi.org/10.1117/12.237669

KEYWORDS: Semiconductor lasers, Absorption, Atmospheric sensing, Etching, Waveguides, Coating, Wavelength tuning, Optoelectronics, Laser damage threshold, Spectroscopes

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Proceedings Article | 12 April 1996 Paper

AlGaAsSb/InGaAsSb/GaSb quantum well lasers with separate confinement heterostructures for 2-um operation

Dmitri Garbuzov, Hao Lee, Pamela York, Raymond Menna, Ramon Martinelli, Louis DiMarco, S. Yegna Narayan, David Capewell, John Connolly

Proceedings Volume 2682, (1996) https://doi.org/10.1117/12.237658

KEYWORDS: Quantum wells, Waveguides, Semiconductor lasers, Cladding, Luminescence, Near field optics, Heterojunctions, Diodes, Laser damage threshold, Absorption

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Proceedings Article | 12 April 1996 Paper

High-power separate-confinement heterostructure AlGaAs/GaAs laser diodes with broadened waveguide

Dmitri Garbuzov, Joseph Abeles, Nancy Morris, Peter Gardner, Alfred Triano, Maria Harvey, Dean Gilbert, John Connolly

Proceedings Volume 2682, (1996) https://doi.org/10.1117/12.237659

KEYWORDS: Waveguides, Near field optics, Quantum wells, Waveguide lasers, Semiconductor lasers, Cladding, Continuous wave operation, Diodes, Near field, High power lasers

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Proceedings Article | 28 April 1995 Paper

InGaAsSb/AlGaAsSb mid-infrared diode lasers for gas sensing

Ramon Martinelli, Dmitri Garbuzov, Hao Lee, Pamela York, Raymond Menna, John Connolly, S. Yegna Narayan

Proceedings Volume 2382, (1995) https://doi.org/10.1117/12.208459

KEYWORDS: Absorption, Semiconductor lasers, Quantum wells, Continuous wave operation, Spectroscopy, Pulsed laser operation, Carbon dioxide, Gallium antimonide, Temperature metrology, Signal detection

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Proceedings Article | 28 April 1995 Paper

Single-mode distributed-feedback GaAs/AlGaAs quantum well lasers for laser absorption spectroscopy

Nancy Morris, John Connolly, Ramon Martinelli, Joseph Abeles, David Cooper, Clinton Carlisle, Haris Riris, Anthony Cook

Proceedings Volume 2382, (1995) https://doi.org/10.1117/12.208447

KEYWORDS: Absorption, Semiconductor lasers, Laser spectroscopy, Absorption spectroscopy, Molecules, Quantum wells, Laser development, Spectroscopy, Signal detection, Wavelength tuning

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Proceedings Article | 16 June 1993 Paper

Monolithic high-power fanned-out amplifier lasers

Joseph Abeles, Robert Amantea, James Andrews, Pamela York, John Connolly, R. Rios, W. Reichert, Jay Kirk, T. Zamerowski, Dean Gilbert, So Liew, N. Hughes, Jerome Butler, Gary Evans, S. Yegna Narayan, Donald Channin

Proceedings Volume 1850, (1993) https://doi.org/10.1117/12.146922

KEYWORDS: Optical amplifiers, Semiconductor lasers, Oscillators, Wave propagation, Semiconducting wafers, Waveguides, High power lasers, Resistance, Laser applications, Technologies and applications

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Proceedings Article | 1 March 1991 Paper

Two-dimensional edge- and surface-emitting semiconductor laser arrays for optically activated switching

Gary Evans, Arye Rosen, Paul Stabile, David Bour, Nils Carlson, John Connolly

Proceedings Volume 1378, (1991) https://doi.org/10.1117/12.25049

KEYWORDS: Semiconductor lasers, Switching, Mirrors, Laser optics, Gallium arsenide, Quantum efficiency, Switches, Semiconducting wafers, Optical arrays

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