LPCVD SiO2 and polysilicon being used as sacrificial layer and cantilever respectively, a polysilicon micromachined RF switch has been fabricated. In the process the stress of polysilicon is released to prevent polysilicon membrane from bending. The switch offers the potential for building a new fully monolithic integrated RF MEMS for radar and communications applications.
In the paper, development on MBE-based SiGe/Si heterojunction bipolar transistors (HBT) is described. The SiGe/Si film used in the present work was grown by SIVA32 molecular beam epitaxy system made in Riber, France. 3 micrometers process technology with poly-silicon emitter was used to develop SiGe HBT devices. The experimental results indicated that both the direct current characteristics and the cutoff frequency of SiGe HBT are satisfactory. The current gain (beta) of HBT devices is 50, when the collector voltage Vc equals 2V and the collector current Ic equals 5 mA. The cutoff frequency fT equals 5.1 GHz. And the uniformity of the cutoff frequency of HBT is quite good.
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