QD size, uniformity and density in InAs/GaAsSb material system for increasing Sb content are studied using Atomic
Force Microscopy (AFM). AFM results show that QD density and uniformity improve with Sb content increase. The
improvement of QD uniformity is ensured by the narrowing of the analysis of AFM scans. To obtain minimum VBO,
InAs/GaAsSb with various Sb compositions is investigated by PL and TRPL measurements. PL data shows a blue-shift
as excitation power increases as evidence of a type II band structure. Since the PL peak of 8 and 13 % Sb samples did
not shift while that of 15 % Sb sample is blue-shifted with increasing the excitation power it is concluded that InAs
QDs/GaAs0.86Sb0.14 would have minimum valence band offset. This tendency is supported by the change of a carrier
lifetime estimated from TRPL data
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