Dr. Leon Shterengas Profile

Dr. Leon Shterengas

Professor at Stony Brook University

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Author

Publications (24)

Proceedings Article | 13 March 2024 Presentation + Paper

CW room temperature operation of the GaSb-based photonic crystal surface emitting diode lasers

L. Shterengas, W. Lee, R. Liu, A. Stein, G. Kipshidze, G. Belenky

Proceedings Volume 12905, 1290506 (2024) https://doi.org/10.1117/12.3001052

KEYWORDS: Photonic crystals, Design, Continuous wave operation, Heterojunctions, Semiconductor lasers, Polarization, Gallium antimonide, Diodes

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Proceedings Article | 9 March 2022 Presentation

Generation of entangled photons via intracavity parametric down-conversion in edge-emitting semiconductor lasers

Alexey Belyanin, Mikhail Tokman, Yongrui Wang, Qianfan Chen, Leon Shterengas

Proceedings Volume PC12021, PC1202109 (2022) https://doi.org/10.1117/12.2609932

KEYWORDS: Photons, Edge emitting semiconductor lasers, Atmospheric propagation, Waveguides, Semiconductor lasers, Group III-V semiconductors, Wave propagation, Signal processing, Semiconductors, Scattering

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Proceedings Article | 4 March 2022 Presentation + Paper

Electrically pumped epitaxially regrown [lambda] > 2 µm GaSb-based photonic crystal surface-emitting lasers

Leon Shterengas, R. Liu, G. Kipshidze, A. Stein, Wonjae Lee, Dmitri Zakharov, Kim Kisslinger, Gregory Belenky

Proceedings Volume 12021, 120210B (2022) https://doi.org/10.1117/12.2615741

KEYWORDS: Photonic crystals, Semiconductor lasers, Quantum wells, Etching, Electroluminescence, Gallium antimonide, Transmission electron microscopy

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Proceedings Article | 9 March 2020 Presentation

The GaSb-based Y-branch DBR and photonic crystal lasers (Conference Presentation)

Leon Shterengas, Jiang Jiang, Takashi Hosoda, Aaron Stein, Alexey Belyanin, Ruiyan Liu, Wonjae Lee, Gela Kipshidze, Gregory Belenky

Proceedings Volume 11301, 113011M (2020) https://doi.org/10.1117/12.2548623

KEYWORDS: Photonic crystals, Laser crystals, Mid-IR, Laser applications, Difference frequency generation, Reflectors, Quantum wells

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Proceedings Article | 13 March 2019 Presentation

Advances in development of the GaSb-based type-I quantum-well cascade-diode lasers: wavelength tuning and mode-locking (Conference Presentation)

Leon Shterengas, Takashi Hosoda, Tao Feng, Jiang Jiang, Alexey Belyanin, Gela Kipshidze, Gregory Belenky

Proceedings Volume 10939, 1093918 (2019) https://doi.org/10.1117/12.2513637

KEYWORDS: Semiconductor lasers, Quantum wells, Mode locking, Wavelength tuning, Quantum cascade lasers, Heterojunctions, Laser optics, Light emitting diodes, Quantum efficiency, Pulsed laser operation

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Proceedings Article | 19 February 2018 Paper

Passive mode-locking of 3.25um GaSb-based type-I quantum-well cascade diode lasers

Tao Feng, Leon Shterengas, Gela Kipshidze, Takashi Hosoda, Meng Wang, Gregory Belenky

Proceedings Volume 10553, 1055319 (2018) https://doi.org/10.1117/12.2287463

KEYWORDS: Mode locking, Semiconductor lasers, Quantum wells, Continuous wave operation, Waveguides, Mid-IR, Frequency combs, Ultrafast laser spectroscopy, Spectroscopy, Sensors

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SPIE Journal Paper | 14 September 2017 Open Access

External cavity cascade diode lasers tunable from 3.05 to 3.25 μm

Meng Wang, Takashi Hosoda, Leon Shterengas, Gela Kipshidze, Ming Lu, Aaron Stein, Gregory Belenky

OE, Vol. 57, Issue 01, 011012, (September 2017) https://doi.org/10.1117/12.10.1117/1.OE.57.1.011012

KEYWORDS: Semiconductor lasers, Quantum wells, Laser damage threshold, Quantum cascade lasers, Reflectivity, Waveguide lasers, Heterojunctions, Aluminum, Continuous wave operation, Waveguides

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Proceedings Article | 28 April 2017 Presentation

Properties of novel metamorphic III-V materials with ultra-low bandgaps (Conference Presentation)

Sergey Suchalkin, Gregory Belenky, Leon Shterengas, Boris Laykhtman, Gela Kipshidze, Maxim Ermolaev, Dmitry Smirnov, Jonathan Ludwig, Seongphill Moon, David Graf, Stefan Svensson, Wendy Sarney

Proceedings Volume 10111, 101112U (2017) https://doi.org/10.1117/12.2251362

KEYWORDS: Nanoelectronics, Photonics, Current controlled current source, Modulation, Antimony

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Proceedings Article | 20 February 2017 Presentation + Paper

High-power 1.9-3.3-um type-I quantum-well cascade diode lasers

L. Shterengas, T. Hosoda, M. Wang, T. Feng, G. Kipshidze, G. Belenky

Proceedings Volume 10123, 101230P (2017) https://doi.org/10.1117/12.2251229

KEYWORDS: Semiconductor lasers, High power lasers, Quantum wells, Laser spectroscopy, Continuous wave operation, Quantum cascade lasers, Mid-IR, Waveguide modes, Waveguides, Laser damage threshold, Heterojunctions, Aluminum, Diffraction

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Proceedings Article | 7 March 2016 Paper

First demonstration of single-mode distributed feedback type-I GaSb cascade diode laser emitting near 2.9 um

Mathieu Fradet, Takashi Hosoda, Clifford Frez, Leon Shterengas, Stanley Sander, Siamak Forouhar, Gregory Belenky

Proceedings Volume 9767, 97670U (2016) https://doi.org/10.1117/12.2213224

KEYWORDS: Semiconductor lasers, Quantum wells, Gallium antimonide, Sensors, Waveguides, Absorption, Diodes, Heterojunctions, Gallium indium arsenide antimonide phosphide, Copper

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Proceedings Article | 7 March 2016 Paper

Type-I QW cascade diode lasers for spectral region above 3 um

L. Shterengas, T. Hosoda, M. Wang, T. Feng, G. Kipshidze, G. Belenky

Proceedings Volume 9767, 976703 (2016) https://doi.org/10.1117/12.2208933

KEYWORDS: Semiconductor lasers, Quantum wells, Quantum cascade lasers, Heterojunctions, High power lasers, Mid-IR, Semiconductors, Laser damage threshold, Laser development, Methane, Continuous wave operation, Diodes, Etching, Waveguides, Tunable lasers

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Proceedings Article | 10 March 2015 Paper

Type-I QW cascade diode lasers with 830 mW of CW power at 3 µm

L. Shterengas, R. Liang, T. Hosoda, G. Kipshidze, G. Belenky, S. Bowman, R. Tober

Proceedings Volume 9382, 93820X (2015) https://doi.org/10.1117/12.2076631

KEYWORDS: Quantum wells, Semiconductor lasers, Continuous wave operation, Quantum cascade lasers, Laser damage threshold, Diodes, Heterojunctions, Laser development, Waveguides

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Proceedings Article | 27 February 2014 Paper

Cascade pumping of GaSb-based type-I quantum well diode lasers

L. Shterengas, R. Liang, G. Kipshidze, T. Hosoda, S. Suchalkin, G. Belenky

Proceedings Volume 9002, 900213 (2014) https://doi.org/10.1117/12.2038429

KEYWORDS: Quantum wells, Semiconductor lasers, Quantum cascade lasers, Heterojunctions, Continuous wave operation, Diodes, Waveguides, Laser damage threshold, Light emitting diodes, Absorption

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Proceedings Article | 11 June 2013 Paper

Infrared emitters and photodetectors with InAsSb bulk active regions

Ding Wang , Youxi Lin, Dmitry Donetsky, Gela Kipshidze , Leon Shterengas, Gregory Belenky, Stefan Svensson, Wendy Sarney, Harry Hier

Proceedings Volume 8704, 870410 (2013) https://doi.org/10.1117/12.2016082

KEYWORDS: Heterojunctions, Antimony, Quantum efficiency, Infrared radiation, Electroluminescence, Sensors, Photodetectors, Infrared photography, Long wavelength infrared, Laser sintering

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Proceedings Article | 31 May 2012 Paper

Unrelaxed bulk InAsSb with novel absorption, carrier transport, and recombination properties for MWIR and LWIR photodetectors

Ding Wang, Youxi Lin, Dmitry Donetsky, Leon Shterengas, Gela Kipshidze, Gregory Belenky, Wendy Sarney, Harry Hier, Stefan Svensson

Proceedings Volume 8353, 835312 (2012) https://doi.org/10.1117/12.919451

KEYWORDS: Gallium antimonide, Antimony, Indium arsenide, Absorption, Long wavelength infrared, Laser sintering, Superlattices, Mid-IR, Photodetectors, Luminescence

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Proceedings Article | 21 May 2011 Paper

Effects of carrier concentration and phonon energy on carrier lifetime in type-2 SLS and properties of InAs[sub]1-X[/sub]Sb[sub]X[/sub] alloys

G. Belenky, G. Kipshidze, D. Donetsky, S. Svensson, W. Sarney, H. Hier, L. Shterengas, D. Wang, Y. Lin

Proceedings Volume 8012, 80120W (2011) https://doi.org/10.1117/12.883625

KEYWORDS: Laser sintering, Gallium antimonide, Antimony, Long wavelength infrared, Mercury cadmium telluride, Mid-IR, Absorption, Modulation, Phonons, Indium arsenide

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Proceedings Article | 17 February 2011 Paper

Type-I GaSb based single lateral mode diode ridge lasers operating at room temperature in 3.1-3.2 μm spectral region

G. Tsvid, T. Hosoda, J. Chen, G. Kipshidze, L. Shterengas, C. Frez, A. Soibel, S. Forouhar, G. Belenky

Proceedings Volume 7953, 79531Q (2011) https://doi.org/10.1117/12.875307

KEYWORDS: Dielectrics, Waveguides, Continuous wave operation, Metals, Semiconductor lasers, Gallium antimonide, Near field optics, Laser processing, Diodes

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Proceedings Article | 24 January 2011 Paper

Low power consumption lasers for next generation miniature optical spectrometers for trace gas analysis

S. Forouhar, C. Frez, K. J. Franz, A. Ksendzov, Y. Qiu, K. A. Soibel, J. Chen, T. Hosoda, G. Kipshidze, L. Shterengas, G. Belenky

Proceedings Volume 7945, 79450M (2011) https://doi.org/10.1117/12.871565

KEYWORDS: Semiconductor lasers, Quantum cascade lasers, Space operations, Spectrometers, Absorption, Laser development, Quantum efficiency, Reliability, Chemical analysis, Continuous wave operation

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Proceedings Article | 4 May 2010 Paper

Type-I GaSb based diode lasers operating at room temperature in 2 to 3.5 µm spectral region

J. Chen, T. Hosoda, G. Tsvid, R. Liang, D. Westerfeld, G. Kipshidze, L. Shterengas, G. Belenky

Proceedings Volume 7686, 76860S (2010) https://doi.org/10.1117/12.852208

KEYWORDS: Waveguides, Semiconductor lasers, Continuous wave operation, Gallium antimonide, Indium, Quantum wells, Cladding, Aluminum, Optical fibers

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Proceedings Article | 12 February 2008 Paper

Interband GaSb-based laser diodes for spectral regions of 2.3-2.4 µm and 3-3.1 µm with improved room-temperature performance

Gregory Belenky, Dimitri Donetski, Leon Shterengas, Takashi Hosoda, Jianfeng Chen, Gela Kipshidze, Michail Kisin, David Westerfeld

Proceedings Volume 6900, 690004 (2008) https://doi.org/10.1117/12.754713

KEYWORDS: Waveguides, Semiconductor lasers, Quantum wells, Heterojunctions, Laser development, Aluminum, Indium gallium arsenide antimonide, Continuous wave operation, Gallium antimonide

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Proceedings Article | 10 May 2007 Paper

Recent developments in high power 2.3-2.4 μm diode lasers

L. Shterengas, G. Belenky, M. Kisin, D. Donetsky, D. Westerfeld

Proceedings Volume 6552, 655214 (2007) https://doi.org/10.1117/12.719604

KEYWORDS: Quantum wells, Semiconductor lasers, Continuous wave operation, Laser damage threshold, High power lasers, Laser countermeasures, Pulsed laser operation, Photons, Surgery, Laser applications

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Proceedings Article | 13 September 2005 Paper

1.5 and 2.3 µm diode laser arrays for optical pumping

A. Gourevitch, G. Belenky, L. Shterengas, D. Donetsky, D. Westerfeld, B. Laikhtman, R. Martinelli, G. Kim

Proceedings Volume 5887, 588711 (2005) https://doi.org/10.1117/12.620001

KEYWORDS: Temperature metrology, Semiconductor lasers, Laser development, Pulsed laser operation, High power lasers, Continuous wave operation, Resistance, Erbium, Erbium lasers, Optical pumping

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High wall-plug efficiency and a wide range of available wavelengths make laser diode arrays preferable for many high-power applications, including optical pumping of solid state lasers. Recently, we designed and fabricated InGaAsP/InP arrays operating at 1.5-μm and In(Al)GaAsSb/GaSb arrays operating at 2.3-μm. We have demonstrated a high continuous-wave (CW) output power of 25 W from a one dimensional laser array and a quasi-CW (q-CW) output power of 110 W from a two dimensional laser array both operating near 1.5-μm. We have obtained a CW output power of 10 W from the 2.3-μm laser array. The 1.5-μm arrays are suitable for resonant pumping of erbium doped solid-state lasers, which require high power optical sources emitting in the narrow erbium absorption bands. Long current-injection pulses produce a considerable temperature increase within the diode laser structure which induces a red-shift of the output wavelength. This thermal drift of the laser array emission spectrum can lead to misalignment with the erbium absorption bands, which decreases pumping efficiency. We have developed an experimental technique to measure the time dependence of the laser emission spectrum during a single current pulse. From the red-shift of the laser emission, we determine the temperature of the laser active region as a function of time. The spacing between the individual laser emitters has an effect on the array heating. In steady state operation, this spacing is a contributing factor in the non-uniformity of the thermal field within the bar, and thus to the overall thermal resistance of the laser bar. Under pulse operation, the transient heating process can be divided into three time periods; each with its own heat transport condition. It was shown that in the initial period of time the heat propagates within the laser bar structure and the laser bar design (fill factor) strongly affects the active region temperature rise. In the later periods the temperature kinetics is insensitive to the fill factor. This analysis has been verified in experimental studies using the 1.5-μm laser arrays.

Proceedings Article | 25 March 2005 Paper

GaSb-based lasers for spectra region 2-4 µm: challenges and limitations

Gregory Belenky, Leon Shterengas, J.G. Kim, Ramon Martinelli, Sergey Suchalkin, Mikhail Kisin

Proceedings Volume 5732, (2005) https://doi.org/10.1117/12.584729

KEYWORDS: Quantum wells, Semiconductor lasers, Mid-IR, Continuous wave operation, Indium gallium arsenide antimonide, Waveguides, High power lasers, Aluminum, Gallium

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Proceedings Article | 11 May 2004 Paper

High-power room-temperature continuous wave operation of type-I In(Al)GaAsSb/GaSb diode lasers at wavelengths greater than 2.5 µm

Jongjin Kim, Leon Shterengas, Ramon Martinelli, Gregory Belenky

Proceedings Volume 5365, (2004) https://doi.org/10.1117/12.528984

KEYWORDS: Quantum wells, Continuous wave operation, Semiconductor lasers, Temperature metrology, High power lasers, Pulsed laser operation, Gallium, Antimony, Laser damage threshold, Indium gallium arsenide antimonide

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Showing 5 of 24 publications

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