The silicon-based gate-controlled lateral thyristor (GC-LT) which takes advantage of high sensitivity at low-lever light intensity is investigated by numerical simulation. The novel gate-controlled lateral thyristor structure is designed with sidewall control gates and base contacts. An operation method of using appropriate gate bias and base bias is proposed to safely establish a dynamic sampling mode. The relationship of the time to trigger and switch the detector on and the light intensities is quantified analytically. Simulation results show that the gated-controlled lateral thyrisor has a high sensitivity to extremely low-lever light intensities such as 1×10-9 W/cm2 at VG1=0.6V due to the coupling cycle amplification between cross-coupled bipolar transistors inside the structure.
We have proposed a novel gate-controlled lateral thyristor (GC-LT) and a pixel circuit featuring intrinsic high dynamic range by multi-mode operation. The novel gate-controlled lateral thyristor structure with high sensitivity for weak light is designed. A cooperative pixel circuit is proposed to establish multi-sampling modes. Experimental results show that the gate-controlled lateral thyristor has high sensitivity for weak-light since the minimum distinguishable signal is as low as 1×10-9W/cm2 due to the cycle amplification between cross-coupled bipolar transistors inside the detector. In addition, more than four orders of light intensity from 10-6 to 10-2W/cm2 can be detected by linear mode and logarithmic mode. A high dynamic range more than 140dB are achieved using the pixel circuit by multi-mode operation.
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