Owing to their outstanding mechanical, tribological, electronic transport, chemical and biocompatibility properties, the
ultrananocrystalline diamond (UNCD) films grown by the microwave plasma chemical vapor deposition method under
hydrogen-poor conditions have become the subject of intense research interests over the past decade. Based on the
available computational capabilities and experimental data, a combined kinetic Monte Carlo (KMC) and molecular
dynamics (MD) procedure has been developed for large-scale atomistic simulation of the responses of polycrystalline
UNCD films under various loading conditions. The mechanical responses of resulting UNCD film have been
investigated by applying displacement-controlled loading in the MD simulation box. Recently, a systematic study is
being performed to understand the combined effects of grain size, loading rate, temperature, imperfection, loading path
and history on the material strengths and failure patterns of both pure and nitrogen-doped UNCD films. Furthermore,
recent MD simulation results of the notch size effect on the failure mechanism of nano-scale hierarchical structures
consisting of one-dimensional members arranged in parallel will also be discussed to better design MEMS devices.
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