We present a novel optical sensor platform designed for the detection of medical biomarkers. The sensor operates by utilizing reflection variation resulting from the modification of Fano resonance conditions. By fabricating one- and two-dimensional subwavelength quasi-periodic structures made of polymer and coated with an inorganic layer, we enable the functionality of the sensor, ultimately leading to increased sensitivity and detection threshold. The development of the sensor’s platform involves a multi-step process. The detection mechanism primarily relies on the optical response of the biosensor. The presence of analytes induces a spectral shift of the Fano resonance, which is caused by the modification of the biolayer thickness. This optical sensor platform holds significant potential for the detection of a variety of medical biomarkers, including analytes related to various pathogenes, cancer biomarkers, and others.
The design of transparent conductive electrodes (TCEs) for optoelectronic devices requires a trade-off between high conductivity or transmittivity, limiting their efficiency. This paper demonstrates a novel approach to fabricating TCEs: a monolithic GaAs high contrast grating integrated with metal (metalMHCG). The technology and influence of fabricated different configurations of metalMHCG on the optical parameters will be shown. We will demonstrate above 90% absolute transmittiance of unpolarized light, resulting in 130% transmittance relative to plain GaAs substrate. Despite record high transmittance, the sheet resistance of the metalMHCG is several times lower than any other TCE, ranging from 0.5 to 1 OhmSq−1.
Monolithic subwavelength gratings integrated with metal (metalMHCG) enable nearly total transmission of light and can be fabricated with common semiconductor materials, however, they require a very high-aspect ratio between height and period of the metalMHCG stripes which is technologically challenging. This study aims the optimization of metalMHCG fabrication procedure by plasma etching taking into account the influence of process gas flow, their composition, pressure, power, and temperature on the wall shape of metaMHCG, etch rate, and etch selectivity. In the result, metalMHCG with high-aspect ratio and dimensions enabling nearly total transmission are fabricated.
In this work we presents effect of ultra high pressure annealing on Si-implanted GaN n-type and p-type epilayers on ammonothermally grown bulk GaN substrates. Samples were blanked implanted with different Si ion fluences from 3x1014 cm-2 to 3x1015 cm-2 and then annealed using UHPA at temperature of 1200, 1300 and 1400°C for 5 minutes at 1 GPa. Ion distribution before and after annealing where investigated using SIMS method showing no Si diffusion in p-type GaN along with Mg diffusion from epilayer and very low Si diffusion in n-type GaN epilayers. X-ray diffraction studies shows that not all defects were recovered after annealing, especially for high ion fluences. Annealing at 1400°C causes changes in implanted GaN morphology. The surface roughness where increased after annealing especially for samples implanted with 3x1015 cm-2Si dose. Our results shows that more work is needed to optimize UHPA parameters for defect recovery in Si-implanted GaN especially for high ion fluences.
Recently much attention gained development of “buffer free” AlGaN/GaN HEMT structures with thin high quality AlN nucleation layer for better carrier confinement in the transistor channel mitigating short channel effects and with reduced thermal resistance. In this work results of development of low resistivity Ti/Al/TiN/Au ohmic contacts to such a structures will be presented . The impact of annealing temperature and different metal layer thickness on the ohmic contact formation, morphology and structural and electrical properties was studied. Low contact resistance of 0.28 Ωmm was obtained for metal stack with Ti/Al 20nm/80nm thickness after annealing at 750°C. Developed ohmic contacts were integrated in the AlGaN/GaN HEMT fabrication process. Good electrical characteristics were obtained showing high on-state current up to 0.95 A/mm. These prove applicability of developed process in technology of buffer-free AlGaN/GaN high electron mobility transistors.
Low angle bevelled-mesa structures are crucial for development of high quality GaN p-n high voltage diodes and photodetectors. However, there is lack of details of development of such a process in the literature. Here in this work, we present results of optimization of bevelled mesa fabrication process for vertical GaN p-n diodes using plasma etching through photoresist mask prepared using reflow process. Developed process of formation of low angle bevelled mesa structures was integrated in the vertical GaN p-n diodes on bulk GaN substrates fabrication process. Very low leakage current density below 10-9 A/cm2 and very high Ion/Ioff current ratio over 1013 was obtained. Low values of ideality factor down to 1.5 were obtained as well. These prove applicability of developed process in technology of vertical GaN p-n diodes on bulk gallium nitride substrates.
Normally-off AlGaN/GaN HEMTs with p-GaN-gate, which offer high drain current and low on-state resistance at high threshold voltage and breakdown voltage values above 600V, are particularly attractive for high-power electronics applications. In this work we present the results of development of high power normally-off p-GaN gate AlGaN/GaN high electron mobility transistors carried out at Łukasiewicz Research Network-Institute of Microelectronics and Photonics. We have developed key technological steps i.e. selective etching of p-GaN layers over AlGaN, deposition of proper passivation layer as well as thermally stable isolation of adjacent devices using selective Fe+ ion implantation, which were integrated in the process flow of manufacturing of high power transistors. Finally we have shown measurements of developed normally-off p-GaN gate AlGaN/GaN HEMT power transistors assembled using in-house developed process in TO-220 package.
AlGaN/GaN High Electron Mobility Transistors (HEMTs) are capable of achieving high breakdown voltage, low operating resistance and large switching speed due to the excellent performance shown by III-N structures. The paper presents selected details of technological experimental work on high voltage (HV) AlGaN/GaN-on-Si HEMTs fabricated with multifinger structures and gate widths of up to 40×1 mm. The electrical isolation of individual devices was elaborated using Al+ implantation. The ions were implanted up to a depth of 200 nm in order to produce an effective damage and isolation up to the non-conducting AlGaN buffer layer. The influence of the ion energy (in the range 208-385 kV) and the ion dose (in the range 8.5x1012-1.4x1013cm-2) on the effectiveness of the fabricated isolation was found. The properties of the fabricated ohmic contacts (using Ti/Al/Mo/Au and Ti/Al/TiN/Cu metallization schemes) with emphasis put on the technology of recess etching were studied. The impact of various pretreatment, applied before deposition of the gate metallization, on electrical parameters of multifinger devices was analysed. The tested pretreatment methods included oxide removal in HCl-based solution, and O2 or BCl3 plasma treatment, with the lowest gate leakage current obtained for the latter. The results of fabrication of the HV HEMTs with single field-plate structures with various dielectrics (Si3N4 or Al2O3) are discussed. The characterization results within the paper cover electrical (I-V characteristics), structural (TEM, XRD), topographical (AFM) and elemental (EDS mapping) analyses.
This work was supported by The National Centre for Research and Development under Agreement nr TECHMATSTRATEG1/346922/4/NCBR/2017 for project "Technologies of semiconductor materials for high power and high frequency electronics"
In-Ga-Zn-O thin films fabricated by reactive RF magnetron sputtering have been investigated for their compositional,
structural, morphological, electrical and optical properties. All resulting films present the amorphous microstructure, and
root mean square roughness below 0.6 nm. The variation of the oxygen content in the deposition atmosphere from 0% to
0.9% results in the formation of a-IGZO thin films consisting of 15-29% indium, 16-28% gallium, 10-13% zinc and
30-60% oxygen, which significantly differs from the InGaZnO4 target composition. IGZO thin films present
the transmittance in range of 75% to 90% for VIS-NIR wavelengths. Mechanism of free electrons generation via oxygen
vacancies formation is proposed to determine the relation between oxygen content in the deposition atmosphere and
the transport properties of the IGZO of the thin films.
We report on the fabrication and performance of amorphous oxide thin-film transistors with In-Ga-Zn-O deposited by
RF magnetron reactive sputtering for semiconductor channel layer. The influence of the electrical transport properties of
the channel on the electrical parameters of thin-film transistors has been determined. By optimizing process parameters
depletion-mode n-channel devices with maximum field-effect mobility (μFE) 10.1 cm2/Vs, threshold voltage Vth=-4.85V
and on to off current ratio (Ion/Ioff)=2.1x102 have been demonstrated.
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