This paper presents a common emitter (CE) four-way combined W-band power amplifier in 0.13μm SiGe BiCMOS process. The PA is designed with four-stage CE structure and λ/4 impedance transformation networks for power combining. The four-way amplifier has a peak small signal gain of 22.6 dB at 92.6 GHz. The 3 dB bandwidth is 15GHz ranging from 83.2-98.2GHz. The PA has saturation output power (Psat) of 20-20.8 dBm at 90-98 GHz and power-added efficiency (PAE) of 7.8-11.6% and output referred 1dB compression point (OP1dB) of 18.2-19 dBm at 90-98 GHz.
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