Mr. Piotr Knyps Profile

Piotr Knyps

at Institute of Microelectronics and Photonics

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Author

Publications (3)

Proceedings Article | 6 November 2019 Paper

Towards increasing of lateral dimension of Molybdenum disulphide MoS2

P. Knyps, P. Caban, P. Ciepielewski, P. Michalowski, E. Dumiszewska, J. Baranowski

Proceedings Volume 11176, 111764K (2019) https://doi.org/10.1117/12.2533912

KEYWORDS: Molybdenum, Raman spectroscopy, Aluminum, Chemical vapor deposition, Sapphire, Oxygen, Ions, Graphene, Mass spectrometry, Microelectronics

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Proceedings Article | 6 November 2019 Paper

AlGaN/GaN HEMTs for the purposes of electronic applications

Piotr Caban, Marek Wojcik, Jaroslaw Gaca, Piotr Knyps, Dominika Teklinska, Ewa Dumiszewska

Proceedings Volume 11176, 111764Z (2019) https://doi.org/10.1117/12.2536751

KEYWORDS: Aluminum nitride, Gallium nitride, Field effect transistors, Etching, X-rays

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Proceedings Article | 22 December 2016 Paper

Epitaxial lift-off technology of GaAs multijunction solar cells

P. Knyps, E. Dumiszewska, W. Kaszub, A. Przewłoka, W. Strupinski

Proceedings Volume 10175, 1017518 (2016) https://doi.org/10.1117/12.2263185

KEYWORDS: Gallium arsenide, Solar cells, Gold, Epitaxial lateral overgrowth, Indium gallium phosphide, Multijunction solar cells, Polymers, Copper, Polymer thin films, Semiconducting wafers

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