As an excellent material platform for integrated photonics, thin film lithium niobate (TFLN) boots the performance of various integrated photonic devices such as integrated electro-optic modulators, integrated optical frequency combs, and nonlinear wavelength converters. The performance of these devices is highly dependent on the quality of nanofabrication method. Despite the fact that conventional inductively coupled plasma–reactive ion etching can achieve TFLN microrings with intrinsic quality factor (Q-factor) as high as 10 million, this method still shows high cost, poor reproducibility, and low throughput. Here, we achieved z-cut TFLN micro-racetrack with an intrinsic Q-factor over 11.9 million using we etching method. This method can facilitate the mass production of high-performance integrated TFLN devices with low cost, high reproducibility, and high throughput.
Periodically poled lithium niobate (PPLN) is a promising platform for realizing high-speed active polarization mode conversion. Especially, the development of thin-film PPLN techniques drives related devices to lower power consumption, higher performance and more integration. However, the wavelength shifting with the temperature variation is still a problem that brings instability and impedes modulation efficiency. In this paper, we first analyzed the temperature characteristics of a well-designed z-cut polarization mode converter based on thin-film PPLN. The simulated modulation voltage is smaller than 5V. Then a temperature-insensitive device was proposed with different coating materials of negative thermo-optic coefficients. Compared to the structure without coating, the wavelength shifting decreases from 0.25nm/°C to 0.07nm/°C, in the meantime, the modulation voltage can still be kept smaller than 5V or even be reduced slightly.
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