We describe the electrical characteristics of graphene by chemical vapor deposition and oxidized using a solution of KMnO4/H2SO4. It was possible to successfully oxidize graphene without any pores or substrate separation. The electrical resistance of the oxidized graphene (OG) rose when the H2SO4 concentration was raised. Due to direct tunneling via the interfaces between the sp2 and sp3 regions, OG in particular exhibits a nonlinear I-V curve resembling that of diode. The oxygen functional groups in the OG rose as the concentration of H2SO4 increased. Additionally, it was discovered that the average distance between faults in the OG had decreased.
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