The semiconductor epitaxial design and lasing characteristics of an optically barrier-pumped GaSb -based semiconductor disk laser (SDL) emitting at 2.0 μm optimized for resonant optical barrier pumping around 1470 nm are presented. Compared to conventional barrier-pumped devices with pump wavelength of 980nm, the novel barrier-pumped device with the smaller quantum deficit reaches a significantly higher power efficiency, and thus a higher output power at a given pump power, due to the lesser internal heat generation. Using an intracavity SiC heat spreader, a cw output power in excess of 300 mW has been achieved at a heat sink temperature of +15 °C, and still more than 500 mW at +10 °C.
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