In this paper the applicability and efficiency of different intermediate layer (IL) stacks for the implementation in
recrystallized wafer equivalent (RexWE) solar cells are investigated. The requirements for the IL in the RexWE concept
are short term stability at temperatures above 1400 °C, high reflectivity for wavelengths exceeding 600 nm, electrical
conductivity and acting as a diffusion barrier against metallic impurities. Various combinations of stoichiometric SiC
layers, silicon rich SiC layers and SiO2 layers were tested as IL stacks regarding their performance after a zone melting
recrystallization (ZMR) process. For the first time, samples with an IL consisting of a SiC multilayer were recrystallized
and successfully processed to solar cells.
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