The oblique incidence of the illumination system in EUV lithography combined with relative thick absorber layer of EUV mask introduces many unique distortions on the image transfer between mask and wafer, most of these distortions are non-linear thus makes the enhancement of resolution more difficult. This paper focus on analysing the impacts of the absorber layer thickness, multilayer thickness and the light source morphology on the image. And improve the EUV lithography and imaging quality by co-optimization of these three parameters. Besides, the intrinsic features and rules of the impacts of absorber thickness on the imaging properties is revealed. And the different behaviour of 1D dense pattern and isolation pattern during the co-optimization is analysed and elucidated. This study provides a potential new direction for resolution enhancement technology.
For 1xnm node and beyond, even Extreme Ultraviolet Lithography (EUV) technology, the serious geometries distortions of the wafer patterns at new process are forcing chipmakers and foundries to utilize model-based SRAFs for ensuring the accuracy and manufacturability of the chips. Model-based Sub-Resolution Assistant Feature (SRAF) is based on inverse lithography (ILT), which is accurate but time-consuming. Therefore, it is necessary to extract the SRAF rules from model-based results and apply them to full chip layout. In this paper, we put forward a methodology of 2D SRAF rule extraction based on model-based results. We can describe and locate the SRAFs by introducing Projection Region, because it reflect the relationship between the SRAFs and main patterns. And the new concept Elongation can make the properties of SARFs more clearly. The experimental results show that the proposed method can extract the 2D SRAFs accurately and output the rules in a general format. The rule simplifying step can decrease the quantity of 2D SRAF rules through the identification and process of symmetry.
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