We show that the carrier capture from the optical confinement layer into quantum dots (QDs) can strongly limit the
modulation bandwidth ω-3 dB of a QD laser. Closed-form analytical expressions are obtained for ω-3 dB in the limiting cases of fast and slow capture. ω-3 dB is highest in the case of instantaneous capture into QDs, when the cross-section of carrier capture into a QD σn = ∞. With reducing σn, ω-3 dB decreases and becomes zero at a certain non-vanishing value σnmin. This σnmin presents the minimum tolerable capture cross-section for the lasing to occur at a given dc component j0 of the injection current density. The higher is j0, the smaller is σnmin and hence the direct modulation of the output power is possible at a slower capture. The use of multiple layers with QDs is shown to considerably improve the modulation response of the laser - the same ω-3 dB is obtained in a multi-layer structure at a much lower j0 than in a single-layer structure. At a plausible value of σn = 10-11 cm2, ω-3 dB as high as 19 GHz is attainable in a 5-QD-layer structure.
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