KEYWORDS: Transistors, Stochastic processes, Resistance, Field effect transistors, Magnetism, Design, Simulations, Magnetic tunnel junctions, Molybdenum, Control systems
For certain applications such as in Artificial Intelligence and neuromorphic computing, modern computing schemes can require prohibitively large circuit- and energy-footprints. Probabilistic computing offers an alternative approach that seeks to exploit its inherently probabilistic nature to act as low-cost natural hardware accelerators for solving a range of complex problems from large-scale combinatorial optimization to Bayesian inference, and invertible Boolean logic. The base unit of probabilistic computing is known as the probabilistic bit, or p-bit, and requires tunable stochasticity; low-barrier Magnetic Tunnel Junctions (MTJs), in which the magnetization of the free layer fluctuates at room-temperature, are a natural spintronics-based solution for such high-quality random number generation and p-bit purposes. In this work, we present the experimental realization of a scaled p-bit core, integrating a stochastic in-plane MTJ with a novel multi-finger 2D-MoS2 transistor to achieve a compact spintronics-based p-bit platform that displays true randomness and a high degree of voltage-tunable stochasticity.
Efficient doping of 2D materials, including carrier type, concentration and mobility, is challenging but essential for enabling their future electronic and photonic applications. We are developing substitutional n- and p- doping of InSe semiconductor by introducing Sn and Zn, respectively, in the Bridgman bulk crystal growth. Electrical transport properties of undoped vs. n- and p- doped InSe crystals are compared by conducting Hall measurements on bulk crystals and FET transport measurements on exfoliated thin layers. Undoped InSe is intrinsically n-type in both bulk and thin-film forms, with [n]~3.5E14 cm-3 and mu values of up to 1,400 cm2 V-1 s-1 for thick layers at 300K. Carrier concentration in Sn-doped thick layers increases approximately two-fold, while the corresponding mobility reduces ~2 times at 300 K. Zn-doped InSe shows p- behavior for bulk InSe with [p]~7.9E13 cm-3 and mu~43 cm2 V-1 s-1 at 300 K, which reverts to ambipolar/n- type behavior for thin layers in FET devices.
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