Mr. Zhi Qin Zhao Profile

Zhi Qin Zhao

at Wuhan Univ. of Technology

SPIE Involvement:

Author

Publications (1)

This will count as one of your downloads.

You will have access to both the presentation and article (if available).

DOWNLOAD NOW

This content is available for download via your institution's subscription. To access this item, please sign in to your personal account.

Email or Username Forgot your username?

Password Forgot your password?

Show

Keep me signed in

No SPIE account? Create an account

Proceedings Article | 19 November 2019 Paper

Numerical simulation of the effects of InAlSb barrier layers on the InSb mid-infrared photodetectors on a mismatched substrate

Zhiqin Zhao, Xu Qian, Bowen Wang, Bowen Jia

Proceedings Volume 11184, 1118411 (2019) https://doi.org/10.1117/12.2536915

KEYWORDS: Photodetectors, Numerical simulations, Mid-IR, Diffusion, Sensors, Photonic devices, Electronic components, Semiconducting wafers, Optical properties, Interfaces

Read Abstract +

Epitaxial growth of a high-quality InSb layer on a mismatched substrate which provides a path to monolithically integrate InSb-based photonic devices and Si/GaAs-based electronic devices on a single wafer. This work is an attempt to investigate the effects of In_0.9Al_0.1Sb electron barrier layers on the electrical and optical properties of the InSb photodetectors on a mismatched substrate. The structure of InSb photodetector is p-i-n type where i-layer is the unintentionally n-type doped. A 25 nm In_0.9Al_0.1Sb layer locates in the i-layer. At 77 K, InAlSb barrier can effectively decrease dark current due to it completely suppresses the generation and recombination current and tunneling current and partially suppresses the diffusion current. The different dark current mechanisms (diffusion, generation and recombination, tunneling) are discussed associated with the bandgap diagrams. For the simulation of photoresponse, the incident light is set to be 5.3 μm. At 77 K, the existence of InAlSb layer doesn’t influence the absorption of incident light due to its limited thickness, however, the InAlSb layer separates the i-layer and impedes the transportation of electrons. Therefore, the InAlSb layer decrease the photoresponse of InSb detector and its effects is more remarkable when the diffusion length of hole is around 5 μm or its location is near the surface of the detector. According to the simulation, optimizing the location of the In_0.9Al_0.1Sb is important to increase the performance of InSb photodetectors on a mismatched substrate.

My Library

You currently do not have any folders to save your paper to! Create a new folder below.

Folder Name

Folder Description

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

ORGANIZATIONAL
Sign in with credentials provided by your organization.

Organizational Username

Organizational Password

Show/Hide Password

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members:

Non-members: ADD TO CART

Keywords/Phrases

Search In:

Publication Years