As a new type of laser gain medium, sesquioxide crystal has significant advantages in thermal conductivity, phonon energy and other properties. It has an important application in improving the performance of picosecond/femtosecond laser. However, due to its hard and brittle characteristics, the machining process is prone to pitting, cracks, microcracks, sub surface defects and other damages, which brings great difficulties and challenges to its polishing process. In order to solve the above problems, a new chemical mechanical polishing slurry is proposed, which includes alumina, cerium oxide, aluminum sulfate, urea and pure water. After polishing with this slurry, the surface roughness of the crystal is better than 0.4nm, the damage depth of the sub surface is better than 1.5 μm, the surface shape is close to 1/10λ, and the material removal rate is up to 48nm / min. Based on the analysis of the results of small angle grazing X-ray diffraction and X-ray photoelectron spectroscopy (XPS), this paper describes the production of ReOHCO3 by the reaction of urea and Re2O3 in the new polishing slurry. The hydration layer composed of ScOOH and Sc2(SO4)3 is formed on the surface of alumina/ aluminum sulfate and crystal, and the soft product is removed by ceria to form a smooth and low damage crystal surface.
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