Presentation + Paper
20 March 2019 Virtual fabrication and advanced process control improve yield for SAQP process assessment with 16 nm half-pitch
Benjamin Vincent, S. Lariviere, C. Wilson, R. H. Kim, J. Ervin
Author Affiliations +
Abstract
This paper uses Virtual Fabrication to assess the imec 7 nm node (iN7) Self-Aligned Quadruple Patterning (SAQP) integration scheme for the 16 nm half-pitch Metal 2 line formation. We present first the technical challenge of obtaining defect-free M2 lines with SAQP, and then provide a solution to achieve a <1% failure rate using a combination of Advanced Process Control and Virtual Fabrication.
Conference Presentation
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Benjamin Vincent, S. Lariviere, C. Wilson, R. H. Kim, and J. Ervin "Virtual fabrication and advanced process control improve yield for SAQP process assessment with 16 nm half-pitch", Proc. SPIE 10963, Advanced Etch Technology for Nanopatterning VIII, 109630Q (20 March 2019); https://doi.org/10.1117/12.2518099
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CITATIONS
Cited by 1 scholarly publication and 1 patent.
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KEYWORDS
Optical lithography

3D modeling

Critical dimension metrology

Process control

Semiconducting wafers

Etching

Silicon

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