Repeatable mask metrology for next-generation lithography tools

Steve L. Hentschel; Henry H. Kamberian; Julius Kovatch

doi:10.1117/12.228170

8 December 1995 Repeatable mask metrology for next-generation lithography tools

Steve L. Hentschel, Henry H. Kamberian, Julius Kovatch

Proceedings Volume 2621, 15th Annual BACUS Symposium on Photomask Technology and Management; (1995) https://doi.org/10.1117/12.228170
Event: 15th Annual BACUS Symposium on Photomask Technology and Management '95, 1995, Santa Clara, CA, United States

Abstract

Recent advances in pattern placement accuracy by photomask lithography tools are requiring much tighter repeatability specifications from the metrology equipment used in the characterization and monitoring process of these reticle writing systems. As pattern positioning accuracy specifications for the next generation tools (i.e., MEBES 4500 and ALTA 3000) dip below the 40 nanometer mark, the metrology tool must maintain a pattern placement measurement precision four times smaller than the writing tool, or less than 10 nanometers to satisfy current industry standards. The newest line width and coordinate registration metrology tool from Nikon, the Laser XY-5i, can measure photomasks and reticles with sub-10 nanometer precision. Recent acceptance test results as well as long term stability data (2-4 months) from a tool in a production environment prove the XY-5i worthy to characterize and monitor the newest mask and reticle lithography tools. A road map for future improvements and specification reduction will show the XY-5i capable of meeting the industry's metrology needs well into the 0.25 micron device generation and beyond.

Citation Download Citation

Steve L. Hentschel, Henry H. Kamberian, and Julius Kovatch "Repeatable mask metrology for next-generation lithography tools", Proc. SPIE 2621, 15th Annual BACUS Symposium on Photomask Technology and Management, (8 December 1995); https://doi.org/10.1117/12.228170

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