Improved hot-carrier reliability of MOSFET analog performance with NO-Nitrided SiO2 gate dielectrics

L. K. Han; Dim-Lee Kwong

doi:10.1117/12.221132

15 September 1995 Improved hot-carrier reliability of MOSFET analog performance with NO-Nitrided SiO₂ gate dielectrics

L. K. Han, Dim-Lee Kwong

Proceedings Volume 2636, Microelectronic Device and Multilevel Interconnection Technology; (1995) https://doi.org/10.1117/12.221132
Event: Microelectronic Manufacturing '95, 1995, Austin, TX, United States

Abstract

This paper studies the hot-carrier immunity on the MOSFET analog performance with NO-nitrided SiO₂ gate dielectrics. Degradation due to hot-carrier stress was investigated in terms of several key analog parameters, including drain output resistance (R_o), voltage swing (V_swing), voltage gain (G_m(DOT)R_o), and differential offset voltage (V_offset). Results indicate that, as compared to conventional SiO₂, NO-nitrided SiO₂ significantly suppresses the hot-carrier degradation in analog device performance for both n- and p- MOSFETs. It is concluded that NO nitridation, which improves interface endurance and electron trapping characteristics of SiO₂ gate oxides, is a promising technique for analog CMOS applications.

Citation Download Citation

L. K. Han and Dim-Lee Kwong "Improved hot-carrier reliability of MOSFET analog performance with NO-Nitrided SiO₂ gate dielectrics", Proc. SPIE 2636, Microelectronic Device and Multilevel Interconnection Technology, (15 September 1995); https://doi.org/10.1117/12.221132

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