Paper
22 October 2014 Dynamical study of thermal conductivity of nanostructured layers by use of the photoinduced transient thermoelectric effect
N. Samuolienė, J. Gradauskas, A. Sužiedėlis, A. Maneikis, M. Treideris
Author Affiliations +
Proceedings Volume 9421, Eighth International Conference on Advanced Optical Materials and Devices (AOMD-8); 94210C (2014) https://doi.org/10.1117/12.2083576
Event: Eighth International Conference on Advanced Optical Materials and Devices, 2014, Riga, Latvia
Abstract
We propose a new fast technique to determine thermal conductivity of a nanostructured material and demonstrate it for porous silicon. Transient thermoelectric voltage is measured after a pulsed laser irradiation, and analysis of the voltage decay time constant and porosity of the structure gives the value of the thermal conductivity. For n-type Si of 70% porosity we obtain the value of 35 W m-1 K-1 what is in good agreement with the results of other investigations The method can be easily applied for any other porous or otherwise structured low-dimensional materials.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. Samuolienė, J. Gradauskas, A. Sužiedėlis, A. Maneikis, and M. Treideris "Dynamical study of thermal conductivity of nanostructured layers by use of the photoinduced transient thermoelectric effect", Proc. SPIE 9421, Eighth International Conference on Advanced Optical Materials and Devices (AOMD-8), 94210C (22 October 2014); https://doi.org/10.1117/12.2083576
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KEYWORDS
Silicon

Thermoelectric materials

Nanostructuring

Pulsed laser operation

Crystals

Semiconductors

Diffusion

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