Investigation of GaN Fin-HEMTs with micron-scale fin width

Li-Cheng Chang; Ming Yang; Yi-Hong Jiang; Chao-Hsin Wu

doi:10.1117/12.2257211

16 February 2017 Investigation of GaN Fin-HEMTs with micron-scale fin width

Li-Cheng Chang, Ming Yang, Yi-Hong Jiang, Chao-Hsin Wu

Proceedings Volume 10104, Gallium Nitride Materials and Devices XII; 101041F (2017) https://doi.org/10.1117/12.2257211
Event: SPIE OPTO, 2017, San Francisco, California, United States

Abstract

In this paper, we utilize the fin-shaped channel to form the AlGaN/GaN HEMTs which can be considered as “Fin- HEMTs” to adjust the threshold voltage (V_TH) toward positive value. The gate metal here is deposited directly on the AlGaN/GaN semiconductor to form the Schottky contact. Although the fin-widths are in the level of micron-scale, the shifts of VTH are still observable and the V_TH becomes more positive with the smaller fin width. This is attributed to the assistant of the side-gate control which can be regarded as the depletion layer formed by Schottky contact at side-gate will deplete the 2DEG in the channel. Therefore, with the smaller fin width, the channel can be pinched off faster which is similar to the double gate MESFETs. The V_TH of planar device is shifted from -3.81 V to -3.37 V with 2-μm-fin-width. On the other hand, unlike to carrier transportation in the conventional FinFET with nano-scale fin width which is dominated by the surface scattering, our Fin-HEMTs with micron-scale fin width exhibit higher drain current than planar device and this is because of the smaller thermal resistance (R_TH) for the fin-HEMT. We extract the R_TH by varying the measured temperature and the R_TH of the device with 4-μm-fin-width and planar device is 58.5 K/W and 249.5 K/W, respectively.

Conference Presentation

Citation Download Citation

Li-Cheng Chang, Ming Yang, Yi-Hong Jiang, and Chao-Hsin Wu "Investigation of GaN Fin-HEMTs with micron-scale fin width", Proc. SPIE 10104, Gallium Nitride Materials and Devices XII, 101041F (16 February 2017); https://doi.org/10.1117/12.2257211

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