Paper
1 June 1992 Standard patterned wafer for performance evaluation of inspection tools
Rivi Sherman, Ehud Tirosh, Gadi Neumann, David Alumot
Author Affiliations +
Abstract
The defect detection capability of patterned wafer inspection tools is mainly determined by type and size of defects appearing on the wafer. However, detection capability depends not only on defect type and size but also on pattern density and defect location relative to the pattern. In particular, a dense pattern results in higher false alarm probability. Moreover, detection probability decreases with the distance between the defect and the neighboring pattern. The pattern density and defect location are not taken into account in the design of commonly used test wafers. This paper presents the design of a test-wafer aimed at meeting these essential properties. The wafer presented here, exhibiting variable density and spacing characteristics, has a potential of being used as an industry standard for evaluation of patterned wafer inspection tools.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rivi Sherman, Ehud Tirosh, Gadi Neumann, and David Alumot "Standard patterned wafer for performance evaluation of inspection tools", Proc. SPIE 1673, Integrated Circuit Metrology, Inspection, and Process Control VI, (1 June 1992); https://doi.org/10.1117/12.59811
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CITATIONS
Cited by 1 scholarly publication.
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KEYWORDS
Semiconducting wafers

Inspection

Wafer inspection

Wafer testing

Defect detection

Process control

Dysprosium

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