1.55-um Er-doped GaN LED

Hongen Shen; Jagadeesh Pamulapati; Monica Alba Taysing-Lara; M. C. Wood; Richard T. Lareau; Matthew H. Ervin; John Devin Mackenzie; Fan Ren; Corinne R. Abernathy; John M. Zavada

doi:10.1117/12.344498

1 April 1999 1.55-um Er-doped GaN LED

Hongen Shen, Jagadeesh Pamulapati, Monica Alba Taysing-Lara, M. C. Wood, Richard T. Lareau, Matthew H. Ervin, John Devin Mackenzie, Fan Ren, Corinne R. Abernathy, John M. Zavada

Author Affiliations +

Proceedings Volume 3622, Rare-Earth-Doped Materials and Devices III; (1999) https://doi.org/10.1117/12.344498
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

Erbium (Er) doped semiconductors are of interest for light- emitting device applications operating at around 1.55 micrometers and for the potential integration with other semiconductor devices. However, the optical emission of Er³⁺ ions in semiconductors has not been as efficient as in dielectric materials, particularly at room temperature. This may be because ionic bonds, which are characteristic of dielectrics, are better suited for forming the required Er³⁺ energy levels than are covalent bonds, which are present in most III-V semiconductors. In this paper, we report 1.55 micrometers emission from an Er-doped GaN LED. We also discuss effect of the measurement temperature on the emission spectrum as well as the effect of sample annealing on the emission spectrum.

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Hongen Shen, Jagadeesh Pamulapati, Monica Alba Taysing-Lara, M. C. Wood, Richard T. Lareau, Matthew H. Ervin, John Devin Mackenzie, Fan Ren, Corinne R. Abernathy, and John M. Zavada "1.55-um Er-doped GaN LED", Proc. SPIE 3622, Rare-Earth-Doped Materials and Devices III, (1 April 1999); https://doi.org/10.1117/12.344498

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