β-Ga2O3 is an ultrawide bandgap semiconductor that shows promise for high-power, deep-UV, and extreme environment applications. Hydrogen can affect the conductivity of β-Ga2O3 through the introduction of shallow donors and the passivation of deep acceptors. This work is a study of the interaction of H with VGa deep acceptors as well as other impurities in β-Ga2O3 by IR spectroscopy and complementary theory.
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