Dr. Stephen J. Pearton Profile

Dr. Stephen J. Pearton

Professor/Materials Science & Engineering at Univ of Florida

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Author

Publications (30)

Proceedings Article | 15 March 2024 Presentation + Paper

O-H centers in β-Ga2O3 with a Ga(1) vacancy at their core

Michael Stavola, W. Beall Fowler, Amanda Portoff, Andrew Venzie, Evan Glaser, Stephen Pearton

Proceedings Volume 12887, 1288708 (2024) https://doi.org/10.1117/12.3009619

KEYWORDS: Gallium, Annealing, Vibration, Hydrogen, Spectroscopy, Materials properties, Infrared radiation, Polarization

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Proceedings Article | 16 March 2023 Presentation + Paper

Electronic and optical properties of 3d-transition metals in β-Ga2O3

Jan Stehr, Mattias Jansson, Stephen Pearton, Weimin Chen, Irina Buyanova

Proceedings Volume 12422, 124220C (2023) https://doi.org/10.1117/12.2662368

KEYWORDS: Gallium oxide, Photoluminescence, Crystals, Cobalt, Optical properties, Chromium, Transition metals

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Proceedings Article | 5 March 2020 Presentation + Paper

High-voltage high-current vertical geometry Ga2O3 rectifiers

Minghan Xian, Chaker Fares, Patrick Carey, Fan Ren, Marko Tadjer, Yu-Te Liao, Chin-Wei Chang, Jenshan Lin, Ribhu Sharma, Mark Law, Peter Raad, Pavel Komarov, Zahabul Islam, Aman Haque, Akito Kuramata, S. Pearton

Proceedings Volume 11281, 112810J (2020) https://doi.org/10.1117/12.2550769

KEYWORDS: Gallium, Switching, Diodes, Silicon carbide, Dielectrics, Crystals, Silicon, Electronics, Gallium nitride, Resistance

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Proceedings Article | 1 March 2019 Presentation + Paper

DC and dynamic switching characteristics of field-plated vertical geometry [beta]-Ga2O3 rectifiers

Jiancheng Yang, Patrick Carey, Fan Ren, Yen-Ting Chen, Y. Liao, Chin-Wei Chang, Jenshan Lin, Marko Tadjer, S. Pearton, David Smith, Akito Kuramata

Proceedings Volume 10919, 1091916 (2019) https://doi.org/10.1117/12.2515006

KEYWORDS: Gallium, Switching, Diodes, Silicon carbide, Doping, Gallium nitride, Ionization, Electrons, Field effect transistors, Dielectrics

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Proceedings Article | 23 February 2018 Presentation + Paper

Radiation and process-induced damage in Ga2O3

S. Pearton, Jiancheng Yang, F. Ren, G. Yang, Jihyun Kim, M. Stavola, A. Kuramata

Proceedings Volume 10532, 105320K (2018) https://doi.org/10.1117/12.2284486

KEYWORDS: Gallium, Diodes, Annealing, Plasma, Field effect transistors, Etching, Transistors, Ions, Gallium nitride, Dry etching

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Proceedings Article | 19 April 2017 Presentation

Use of sub-bandgap optical pumping to identify defects in AlGaN/GaN high electron mobility transistors (Conference Presentation)

Fan Ren, Stephen Pearton, Tsung Sheng Kang, David Cheney, Brent Gila

Proceedings Volume 10104, 101041A (2017) https://doi.org/10.1117/12.2251166

KEYWORDS: Gallium nitride, Field effect transistors, Optical pumping, Transistors, Telecommunications, Satellite communications, Satellites, Advanced radar, Piezoelectric effects, Nondestructive evaluation

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Proceedings Article | 27 April 2015 Paper

Enhancement of AlGaN/GaN high-electron mobility transistor off-state drain breakdown voltage via backside proton irradiation

F. Ren, Y.-H. Hwang, S. Pearton, Erin Patrick, Mark Law

Proceedings Volume 9363, 936312 (2015) https://doi.org/10.1117/12.2076676

KEYWORDS: Field effect transistors, Gallium nitride, Silicon, Transistors, Floods, TCAD, Interfaces, Etching, Virtual reality, Computer simulations

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Proceedings Article | 27 March 2013 Paper

The effects of proton irradiation on the reliability of InAlN/GaN high electron mobility transistors

L. Liu, C. Lo, Y. Xi, Y. Wang, H.-Y. Kim, J. Kim, S. Pearton, O. Laboutin, Y. Cao, J. Johnson, I. Kravchenko, F. Ren

Proceedings Volume 8625, 86250W (2013) https://doi.org/10.1117/12.2007287

KEYWORDS: Field effect transistors, Reliability, Transistors, Gallium nitride, Metals, Materials science, Heterojunctions, Silicon carbide, Electrodes, Sapphire

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Proceedings Article | 21 January 2012 Paper

Oxygen sensors made by monolayer graphene

S. C. Hung, C. W. Chen, M. D. Yang, C. W. Yeh, C. H. Wu, G. C. Chi, R. Fan, S. Pearton

Proceedings Volume 8268, 826822 (2012) https://doi.org/10.1117/12.907768

KEYWORDS: Graphene, Oxygen, Sensors, Raman spectroscopy, Thin films, Copper, Chemical vapor deposition, Scanning electron microscopy, Molecules, Time metrology

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Proceedings Article | 26 May 2011 Paper

Characteristics of CO sensors made by polar and nonpolar ZnO nanowires gated AlGaN/GaN high electron mobility transistor

S. C. Hung, C. W. Chen, C. Y. Shieh, G. C. Chi, F. Ren, S. J. Pearton

Proceedings Volume 8024, 80240P (2011) https://doi.org/10.1117/12.883015

KEYWORDS: Zinc oxide, Carbon monoxide, Field effect transistors, Sensors, Transistors, Chemical vapor deposition, Oxygen, Gallium nitride, Crystals, Nanowires

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Proceedings Article | 24 January 2011 Paper

GaN as a detector of a-particles and neutrons

A. Polyakov, N. Smirnov, A. Govorkov, In-Hwan Lee, S. Pearton, N. Kolin, I. L. Gazizov, V. M. Zalyetin

Proceedings Volume 7945, 79451F (2011) https://doi.org/10.1117/12.869686

KEYWORDS: Sensors, Gallium nitride, Metalorganic chemical vapor deposition, Particles, Energy efficiency, Diodes, Silicon, Temperature metrology, Light emitting diodes, Gallium arsenide

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Proceedings Article | 5 May 2010 Paper

AlGaN/GaN high-electron mobility transistor-based sensors for environmental and bio-applications

B. Chu, Y. L. Wang, K. Chen, C. Chang, C. F. Lo, S. Pearton, G. Papadi, J. Coleman, B. Sheppard, C. Dungen, Kevin Kroll, Nancy Denslow, A. Dabiran, P. Chow, J. Johnson, E. Pine, K. Linthicum, F. Ren

Proceedings Volume 7679, 76790Q (2010) https://doi.org/10.1117/12.844995

KEYWORDS: Sensors, Field effect transistors, Ions, Mercury, Carbon dioxide, Zinc oxide, Environmental sensing, Signal detection, Molecules, Nanorods

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Proceedings Article | 15 February 2010 Paper

Oxide thin film transistors on novel flexible substrates

S. Pearton, Wantae Lim, Erica Douglas, Fan Ren, Young Woo Heo, D. Norton

Proceedings Volume 7603, 760315 (2010) https://doi.org/10.1117/12.844935

KEYWORDS: Transistors, Oxides, Thin films, Glasses, Zinc oxide, Dielectrics, Sputter deposition, Oxygen, Semiconductors, Transparency

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Proceedings Article | 19 February 2009 Paper

AlGaN/GaN HEMT And ZnO nanorod-based sensors for chemical and bio-applications

B. Chu, B. Kang, H. Wang, C. Chang, T, Lele, Y. Tseng, A. Goh, A. Sciullo, W. Wu, J. N. Lin, B. Gila, S. Pearton, J. Johnson, E. Piner, K. Linthicum, F. Ren

Proceedings Volume 7216, 72162A (2009) https://doi.org/10.1117/12.802823

KEYWORDS: Field effect transistors, Sensors, Glucose, Zinc oxide, Signal detection, Biosensors, Electrodes, Gas sensors, Liquids, Nanorods

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Proceedings Article | 16 February 2009 Paper

Improved surface morphology and edge definition for ohmic contacts to AlGaN/GaN heterostructures

Yung-Ling Lan, Hung-Cheng Lin, Hsueh-Hsing Liu, Geng-Yen Lee, Fan Ren, Stephen Pearton, Mao-Nan Chang, Jen-Inn Chyi

Proceedings Volume 7216, 72162P (2009) https://doi.org/10.1117/12.810165

KEYWORDS: Annealing, Surface roughness, Heterojunctions, Chromium, Molybdenum, Resistance, Aluminum, Nickel, Gallium nitride, Scanning electron microscopy

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Proceedings Article | 30 April 2008 Paper

Wide bandgap nanowire sensors

S. Pearton, B. Kang, B. Gila, D. Norton, L. Tien, H. Wang, F. Ren, J. Lin

Proceedings Volume 6959, 695903 (2008) https://doi.org/10.1117/12.760421

KEYWORDS: Zinc oxide, Sensors, Glucose, Hydrogen, Electrodes, Field effect transistors, Gold, Metals, Nanorods, Nanowires

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Proceedings Article | 15 February 2008 Paper

P-type ZnO thin films via phosphorus doping

D. Norton, H. Kim, J. M Erie, S. Pearton, Y. Wang, F. Ren

Proceedings Volume 6895, 68950W (2008) https://doi.org/10.1117/12.785467

KEYWORDS: Zinc oxide, Doping, Phosphorus, Annealing, Hydrogen, Oxygen, Thin films, Capacitance, Semiconductors, Pulsed laser deposition

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Proceedings Article | 25 September 2007 Paper

Wide bandgap nanowire sensors

S. Pearton, B. Kang, B. Gila, D. Norton, L. Tien, O. Kryliouk, H. Wang, F. Ren, Yeoung-Woo Heo

Proceedings Volume 6769, 67690A (2007) https://doi.org/10.1117/12.731121

KEYWORDS: Hydrogen, Zinc oxide, Sensors, Indium nitride, Resistance, Platinum, Palladium, Electrodes, Nanorods, Nanowires

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Proceedings Article | 12 September 2006 Paper

Effect of argon annealing of phosphorus-doped ZnO and (Zn,Mg)O thin-films-grown pulsed laser deposition

Yuanjie Li, Hyun-Sik Kim, Jean-Marie Erie, Fan Ren, Stephen Pearton, David Norton

Proceedings Volume 6337, 633708 (2006) https://doi.org/10.1117/12.694798

KEYWORDS: Zinc oxide, Zinc, Annealing, Oxygen, Argon, Doping, Magnesium, Phosphorus, Pulsed laser deposition, Crystals

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Proceedings Article | 2 March 2006 Paper

Synthesis and characterization of (Zn,Mg)O:P/ZnO heterostructures

Yuanjie Li, J. Erie, H. Kim, S. Pearton, D. Norton, J. Chen, F. Ren

Proceedings Volume 6122, 61220R (2006) https://doi.org/10.1117/12.645105

KEYWORDS: Zinc oxide, Heterojunctions, Oxygen, Laser energy, Sapphire, Edge emitting semiconductor lasers, Temperature metrology, Gold, Atomic force microscopy, Light emitting diodes

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Proceedings Article | 15 February 2006 Paper

Spin depolarization in semiconductor spin detectors

W. Chen, I. Buyanova, Y. Oka, C. Abernathy, S. Pearton

Proceedings Volume 6118, 611804 (2006) https://doi.org/10.1117/12.644601

KEYWORDS: Quantum wells, Polarization, Excitons, Sensors, Indium gallium nitride, Picosecond phenomena, Spin polarization, Semiconductors, Magnetism, Spectroscopy

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Proceedings Article | 14 September 2005 Paper

Fabrication of p-n junctions in as-grown ZnMgO/ZnO films

Hyuck Soo Yang, Y. Li, D. Norton, S. Pearton, Soohwan Jang, F. Ren, L. Boatner

Proceedings Volume 5941, 59411P (2005) https://doi.org/10.1117/12.616668

KEYWORDS: Zinc oxide, Annealing, Resistance, Temperature metrology, Doping, Diodes, Ultraviolet radiation, Titanium, Electronics, Pulsed laser deposition

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Proceedings Article | 14 September 2005 Paper

Properties of phosphorus-doped ZnO and (Zn,Mg)O thin films via pulsed laser deposition

Y. Li, Y. Heo, J. Erie, H. Kim, K. Ip, S. Pearton, D. Norton

Proceedings Volume 5941, 59411T (2005) https://doi.org/10.1117/12.615015

KEYWORDS: Zinc oxide, Oxygen, Doping, Zinc, Magnesium, Thin films, Crystals, Pulsed laser deposition, Phosphorus, Luminescence

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Proceedings Article | 25 July 2003 Paper

Finite difference analysis of thermal characteristics of CW operation 850-nm lateral current injection and implant-apertured VCSEL with flip-chip bond design

Rishabh Mehandru, Gerard Dang, Kelly Ip, Suku Kim, Fan Ren, Stephen Pearton, William Hobson, John Lopata, Wayne Chang, H. Shen

Proceedings Volume 4986, (2003) https://doi.org/10.1117/12.480855

KEYWORDS: Vertical cavity surface emitting lasers, Continuous wave operation, Resistance, Mirrors, Optical switching, Optical fibers, Semiconductors, Analytical research, Chemical analysis, Signal processing

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Proceedings Article | 1 July 2003 Paper

Charge and spin functionality in wide bandgap oxides

David Norton, Young-Woo Heo, Stephen Pearton, Arthur Hebard, Nikoleta Theodoropoulou, Lynn Boatner, John Budai, Y. Park, R. Wilson

Proceedings Volume 4999, (2003) https://doi.org/10.1117/12.479612

KEYWORDS: Zinc oxide, Manganese, Doping, Semiconductors, Magnetic semiconductors, Magnetism, Transition metals, Phosphorus, Zinc, Ferromagnetics

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Proceedings Article | 28 August 2002 Paper

Advanced processing of group-III nitrides

S. Pearton, Fan Ren, B. Gila, Cammy Abernathy

Proceedings Volume 10303, 1030308 (2002) https://doi.org/10.1117/12.482624

KEYWORDS: Gallium nitride, Electronic components, Doping, Dielectrics

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Proceedings Article | 13 April 2000 Paper

Effect of impurity concentration on 1.54 um emission from GaN:Er

Cammy Abernathy, Mark Overberg, John Mackenzie, Uwe Hoemmerich, Stephen Pearton, R. Wilson, John Zavada

Proceedings Volume 3942, (2000) https://doi.org/10.1117/12.382882

KEYWORDS: Erbium, Gallium nitride, Carbon, Luminescence, Oxygen, Atomic force microscopy, Scanning electron microscopy, Gallium, Surface roughness, Doping

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Proceedings Article | 3 September 1999 Paper

New optical sensor for real-time in-situ end point monitoring during dry etching of III-V ternary multistack layers

Kevin Liddane, Ramdane Benferhat, Jewon Lee, Russell Westerman, David Johnson, John Donohue, Jay Sasserath, Stephen Pearton

Proceedings Volume 3882, (1999) https://doi.org/10.1117/12.361321

KEYWORDS: Etching, Interferometry, Gallium arsenide, Cameras, Semiconducting wafers, Process control, Dry etching, Control systems, Refractive index, Reflection

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Proceedings Article | 15 April 1997 Paper

Dry etching processes for fabrication of QWIPs and other detector structures

Stephen Pearton

Proceedings Volume 2999, (1997) https://doi.org/10.1117/12.271182

KEYWORDS: Etching, Plasma, Ions, Reactive ion etching, Gallium arsenide, Dry etching, Chemistry, Quantum well infrared photodetectors, Anisotropic etching, Gallium nitride

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Proceedings Article | 1 April 1991 Paper

High-temperature degradation-free rapid thermal annealing of GaAs and InP

Stephen Pearton, Avishay Katz, Michael Geva

Proceedings Volume 1393, (1991) https://doi.org/10.1117/12.25699

KEYWORDS: Semiconducting wafers, Annealing, Gallium arsenide, Photomicroscopy, Beryllium, Silicon, Wafer-level optics, Temperature metrology, Doping, Pyrometry

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