ASML NXE scanners are installed at customer factories and being used in high volume manufacturing (HVM) of leading semiconductor devices. EUV sources have improved performance and availability. In this paper we provide an overview of 13.5nm tin laserproduced-plasma (LPP) extreme-ultraviolet (EUV) sources enabling HVM for the most advanced nodes. Sources at customers operate at ~250 Watt power with high availability. Progress in Collector Lifetime and EUV Source performance is shown. High NA EUVL Scanners are in development for future nodes of device manufacturing, with new requirements for source geometry and few new requirements for source performance. In this paper we additionally discuss our progress on the High NA source towards shipment to the customer later this year. Finally, we provide an update on power scaling at ASMLs research systems including reaching a new 600W milestone for EUV Sources and the next steps towards even higher powers.
Over 50 EUV scanners are installed at customer factories and being used in high volume manufacturing (HVM) of leading semiconductor devices. The latest generation of EUV sources are operating at 250W while meeting all other requirements. Future EUV scanners are projected to require more stable EUV and higher powers >600W to meet throughput requirements.
In this paper, we provide an overview of a the latest advances in the laboratory for tin laser-produced-plasma (LPP) extreme-ultraviolet (EUV) sources at 13.5nm enabling HVM at the N5 node and beyond, highlighting crucial EUV source technology developments needed to meet future requirements for EUV power and stability. This includes the performance of subsystems such as the Collector and the Droplet Generator.
Multiple ASML NXE:3400C scanners are installed at customer factories and being used in high volume manufacturing (HVM) of leading semiconductor devices. The latest generation of NXE:3400C sources has improved performance and availability by implementing a modular vessel concept and an automated tin supply system.
In this paper, we provide an overview of 13.5 nm tin laser-produced-plasma (LPP) extreme-ultraviolet (EUV) sources enabling HVM at the N5 node and beyond. The field performance of sources operating at 250 watts power including the performance of subsystems such as the Collector and the Droplet Generator will be shown. Progress in the development of key technologies for power scaling towards 420W will be described.
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