At this moment, extreme ultraviolet (EUV) systems equipped with a 0.33 numerical aperture (NA) have proven themselves and are successfully applied in high-volume manufacturing. The next step is 0.55 NA and is ready to enter mass production. This so-called high NA scanner, targeting an ultimate resolution of 8 nm half-pitch, will bring multiple benefits to the semiconductor market such as reduction of process complexity, yield improvement, higher resolution enabling printability of smaller features at increased density, and cost of technology reduction. It will extend Moore’s law for at least another decade. A lens design, capable of providing the required NA, has been identified; this so-called anamorphic lens will provide 8 nm resolution in all orientations. Paired with new, faster stages, and more accurate sensors providing the tight focus and overlay control, it enables future nodes. The first 0.55 NA scanner is located in the so-called high NA Lab in Veldhoven where it is interfaced with a track and operated in cooperation with Imec, Leuven. It also allows for early customer access. We will provide the backgrounds of the architecture of the high NA tool. Next to this, an update will be given on the status of the imaging and overlay performance of this exposure tool.
ASML NXE scanners are installed at customer factories and being used in high volume manufacturing (HVM) of leading semiconductor devices. EUV sources have improved performance and availability. In this paper we provide an overview of 13.5nm tin laserproduced-plasma (LPP) extreme-ultraviolet (EUV) sources enabling HVM for the most advanced nodes. Sources at customers operate at ~250 Watt power with high availability. Progress in Collector Lifetime and EUV Source performance is shown. High NA EUVL Scanners are in development for future nodes of device manufacturing, with new requirements for source geometry and few new requirements for source performance. In this paper we additionally discuss our progress on the High NA source towards shipment to the customer later this year. Finally, we provide an update on power scaling at ASMLs research systems including reaching a new 600W milestone for EUV Sources and the next steps towards even higher powers.
In extreme ultraviolet (EUV) lithography, plasmas are used to generate EUV light. Unfortunately, these plasmas expel high-energy ions and neutrals which damage the collector optic used to collect and focus the EUV light. One of the main problems facing EUV source manufacturers is the necessity to mitigate this debris. A magnetic mitigation system to deflect ionic debris by use of a strong permanent magnet is proposed and investigated. A detailed computational model of magnetic mitigation is presented, and experimental results from an EUV source confirm both the correctness of the model and the viability of magnetic mitigation as a successful means of deflecting ionic debris.
Extreme Ultraviolet (EUV) lithography sources expel high-energy ions and neutral particles, which degrade the quality of the collector optic. The mitigation of this debris is one of the main problems facing potential manufacturers of EUV sources. The use of magnetic fields to deflect ionic debris has been proposed and is investigated here. In this paper, we present a detailed computational model of magnetic mitigation, along with experimental results that confirm the correctness of the model. Using a strong permanent magnet, it is experimentally shown that, using high enough fields, magnetic mitigation can be a successful method of deflecting ionic debris from an EUV source. For example, through an orifice centered at 0° from the pinch, we saw a flux of 1.65×108 +/- 1.5×107 ions/(m2*pulse*eV) of 4keV ions without deflection and a negligible flux with deflection.
With the orifice at a 35° angle from the pinch, a negligible 4keV flux was seen without deflection. However, with
magnetic deflection, a 4keV flux of 1.03x108 +/- 9.4x106 ions/(m2*pulse*eV) were seen. The half-angle spread of the orifice was .047° with a tolerance of .008°.
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