Extreme ultraviolet lithography (EUVL) is employed in the mass production of advanced semiconductor devices, and the development of the high numerical aperture (NA) system for future 3 nm nodes is underway. However, the current tantalum (Ta)-based EUV masks face limitations in imaging performance for finer patterns, necessitating the exploration of alternative EUV mask absorbers. Furthermore, several promising absorber materials present challenges in etching during mask fabrication, leading to delays in their utilization. In this study, we propose a novel approach-the introduction of ion implantation processes in EUV mask fabrication to enhance the etching performance of absorber materials. We employed argon (Ar) ion implantation to enhance the etchability of platinum-tungsten (Pt-W) alloys. We not only acquired an implantation energy and dose condition that had negligible impact on film characteristics, but also confirmed that the etching rate of PtW increased by approximately 1.4 times after ion implantation, resulting in higher sidewall angles in patterns. In conclusion, the ion implantation process offers a practical solution for improving etchability without compromising film characteristics, demonstrating the potential for manufacturing EUV masks with absorbers featuring low etching performance.
BackgroundExtreme ultraviolet (EUV) attenuated phase-shifting masks are complex structures with stringent requirements for manufacturing precision and materials properties, and they have been object of extensive research lately.AimWe aim to characterize the optical constants (n and k) and the thickness of the layers in the mask stack with a nondestructive method.ApproachUsing a spectral reflectometry approach with EUV and soft X-ray illumination at various incidence angles, different layer’s properties in a photomask blank can be selectively probed. The optical constants and the thicknesses of the layers can be obtained by fitting a suitable model to the experimental reflectance.ResultsThe optical constants of the Pt-W alloy absorber and the thicknesses of the top three layers of the sample stack were accurately characterized.ConclusionsStacked layer’s properties can be selectively probed with the instrument (REGINE) we developed. The properties of the topmost layer can be characterized by assessing the probing depth, before investigating deeper layers with a suitable choice of illumination wavelength and angle of incidence.
Non-destructive nano-metrology is a fundamental tool for semiconductor device manufacturing. Practically, a combination of several metrology techniques is needed throughout the fabrication process of semiconductor chips, from EUV photomask inspection to patterned wafer metrology. EUV light not only facilitates the production of smaller features in lithography but also emerges as a powerful approach for the metrology required to characterize and analyze these intricate features in future technology nodes, thanks to its short wavelength, relevant penetration depth, and high reflectivity with relatively high grazing angles compared to that of x-rays. The reflective grazing incidence nanoscope for EUV (REGINE) at the Swiss Light Source is a prototype platform for reflectometry, scatterometry, and coherent diffraction imaging. It operates in the soft x-ray and EUV region (80 to 200 eV photon energy), and covers a grazing incidence angle range of 0° to 28.6°. REGINE provides the possibility to perform grazing incidence reflectometry and scatterometry for semiconductor metrology. In this study, we present the results of optical constants (n and k) determination and layer thickness characterization with reflectometry procedure for an EUV attenuated phase shifting mask blank, and the analysis of scatterometry results of line-space grating profile reconstruction and overlay measurement.
Extreme ultraviolet (EUV) lithography is a critical technique for fabricating advanced semiconductor devices, and the development of a high numerical aperture (NA) system for future 3 nm nodes is currently in progress. The current Tabased EUV masks exhibit limited imaging performance attributed to mask 3D effects, thereby necessitating the development of alternative EUV masks. In this study, we propose platinum (Pt)-based alloys as the potential absorber materials that offer benefits in terms of both mask manufacturing and imaging performance. Despite the superior imaging performance of Pt due to its optical properties, its adoption as a mask absorber is difficult because of its low etchability. Therefore, tungsten (W) which has high reactivity with fluorine-based etch gas was introduced as an alloy material to lower intermolecular binding energy, and argon (Ar) ion implantation was employed to amorphize the thin film. We evaluated the etching properties of ion-implanted Pt-W alloy thin films using CF4/O2/Ar gas. As a result, we verified that the etch rate of the implanted alloy was about 1.86 times higher than that of Pt, resulting in a higher sidewall angle in patterns. Furthermore, based on PROLITH 2022a simulation tool, we confirmed that Pt-W alloys showed about 2.4 NILS at 34 nm thickness which is higher than the current Ta-based mask, and the best focus shift has been mitigated by 33 %. In conclusion, Pt-based materials have the potential to apply as the next-generation absorber for EUV masks that can achieve fine patterning and enhance imaging performance.
Extreme Ultraviolet Lithography (EUVL) is in high volume manufacturing (HVM) for the 7nm node, and a high-NA system for future 3nm nodes is currently in development. However, current Ta-based EUV masks have limited imaging performance due to mask 3D effects, so there is an urgent need for new advanced EUV masks. In this study, we propose a platinum tungsten (Pt-W) alloy as an alternative absorber material with advantages in both imaging performance and EUV mask manufacturing process. Since Pt is a material with both a low refractive index for phase shift effect and a high extinction coefficient for high absorption of EUV light, it shows improvement in imaging performance and mitigation of mask 3D effect (M3D). In order to improve the difficult etching properties of Pt, W was introduced as an alloy material, and a fluorine-based gas was selected as the etching gas. Through the PROLITH 2020b simulation tool, we found that the Pt-W alloy exhibits higher NILS and mitigates non-telecentricity compared to Ta-based absorbers. We also evaluated the etching properties of Pt-W alloy thin films using CF4/Ar gas. As a result, it was confirmed that the etch rate of PtW was about 1.86 times higher than that of Pt, and a platinum tungsten alloy pattern having a high sidewall angle was obtained. In conclusion, Pt-W alloy can be applied as the EUV mask absorber capable of fine patterning while improving the imaging performance.
We improved EUV mask imaging performance through phase and amplitude optimization between 0th and 1st diffraction orders. A specific phase difference between the 0th and 1st diffraction orders can reduce the aerial image split and then improve the imaging performance. The optimum phase difference is 27 degrees in the 14 nm HP L/S pattern and 36 degrees in the 12 nm HP L/S pattern. This effect becomes more evident with the amplitude balancing between the two diffraction orders.
We fabricated and evaluated a high-k mask using Nickel for high-NA EUVL. Since the absorber thickness of the high-k mask is much thinner compared to the Ta-based mask, the mask 3D effects are reduced resulting in improvement of imaging performance. It can resolve 10 nm half-pitch L/S pattern for all the leading candidate systems of 0.55NA EUVL. Also, it is optimized for dry etching and wet cleaning process due to the insertion of CrN spacer layers. We suggest this Ni-based high-k mask for the high-NA system since this exhibit improved imaging performance and easier manufacturability.
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