Mr. Ewin Zhuo Profile

Ewin Zhuo

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Proceedings Article | 26 August 2024 Paper

A study of CrOx composed progressive defect on attenuated PSM and its damaged-free removal process

Joyce Wang, Josh Cheng, Ewin Zhuo, Kevin Yu, Ansel Huang, Mazer Li, Kuang Huang, Zack Huang

Proceedings Volume 13177, 131770J (2024) https://doi.org/10.1117/12.3032717

KEYWORDS: Chromium, Plasma, Mask cleaning, Etching, Plasma treatment

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The formation of progressive defect on attenuated phase shift mask is the main trouble after mask fabrication, especially owing to the introduction of high photon energy exposure from 193nm (ArF) DUV light during the usage in wafer manufacturing fab. Normally, these progressive defects, so-called “haze”, are reported to be the combination of ammonium sulfate which may come from mask clean process, or the combination of AMC and organic outgassing from mask surrounding environment. It is well known that this type haze can be easily eliminated by wet chemical treatment such as wet clean process, so we call it, “conventional haze”. Nevertheless, in the past few years, an obscure progressive defect, which is composed of CrOx, has been observed on attenuated phase shift mask. Normally this defect arises by forming droplets or humps in the Qz area or footing at the basal junction between MoSi and Qz. This phenomenon is dramatically semblable to Cr migration that is firstly observed on COG mask and caused by the exposure of 193nm (ArF) DUV light and electric field. Based on above experience, it may be easier to understand that CrOx type defect appears in the dummy pattern on scriber lane which is constituted by stack of Cr/MoSi/Qz. But it is so confused when CrOx type defect is observed on the phase shifter layer which is only composed by MoSi. And beyond that, this type of defect is scarcely responsive to general wet clean process. In this contribution, we classify the CrOx defect type by on-mask location with different pattern structure. Corresponding possible formation mechanism and control methodology will be discussed and evaluated. Finally, we propose the damaged-free removal process based on defect component and distribution.

Proceedings Article | 16 September 2022 Paper

Massive tiny MoSi defect reduction in NCAR photoresist blank

Joyce Wang, Ansel Huang, Mazer Li, Josh Cheng, Bin Lin, Ewin Zhuo, Gerrard Chen, Kevin Yu, Yu-Kuang Huang, Zack Huang

Proceedings Volume 12325, 123250C (2022) https://doi.org/10.1117/12.2640450

KEYWORDS: Etching, Inspection, Photoresist materials, Photomasks, Photoresist developing, Plasma, Manufacturing, Reactive ion etching, Plasma etching, Photoresist processing

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It is well known that with the development of advanced semiconductor technology, the phase shift mask (PSM) has been widely utilized in the semiconductor lithography process. Usually, the PSM blank coated with negative chemically amplified resist (NCAR) was used for fabrication of AA (Active area) layer and Poly layer mask which utilized in the logic semiconductor products. Under the electron beam (EB) writing systems, this NCAR resist showed better opaque pattern forming ability for complex OPC pattern and sub-resolution assist bar features[1]. In this contribution, a kind of defect so-called tiny MoSi defect that was captured by KLA inspection tool during NCAR mask fabrication process would be described. This kind of defect randomly scattered over the whole mask and located on quartz surface where photo resist was developed for not exposure by electron beam and Cr/MoSi was removed after dry etching process. In order to figure out this problem, we investigated the root cause of tiny MoSi defect by split condition test and cross validation, especially focused on the interaction between each process unit. According to the verification result, we would propose the possible formation mechanism and modify the recipe based on this understanding. The long-term inspection monitoring result showed that this kind defect density could be reduced from two hundred to less than twenty counts after recipe optimization.

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