In the field of CMOS image sensors research, the design and application of Low-Voltage Differential Signaling (LVDS) drivers are key to achieving efficient video signal transmission. As the frequency of LVDS signals continues to increase, issues of signal loss and attenuation during long-distance cable transmission have become more prominent, posing greater challenges to the performance stability of LVDS drivers. This paper establishes a model for CMOS image sensor LVDS drivers and transmission lines, detailing the attenuation mechanisms of LVDS transmission lines and their impact on differential signal transmission. The study focuses on methods for matching the design of LVDS drivers with transmission line characteristics, while also analyzing the interaction mechanisms between the operating states of MOS transistors in the circuit and key variables of the RLGC transmission line model. Using 1Gbps LVDS data and a 20cm flexible transmission ribbon cable as an example, the effectiveness of the matching method was validated through simulation experiments. This method provides technical support for the reliable design of high-speed LVDS drivers in image sensors or other chips, and offers useful references for the engineering selection of LVDS high-frequency transmission lines.
Recently, type-II superlattice (T2SL) infrared detectors have drawn a lot of attention. Compared with II-VI-based HgCdTe materials, III-V-based T2SL materials (InAs/GaSb and related alloys) have higher quality, uniformity and stability. Besides, T2SL infrared (IR) detectors have flexibility in energy-band engineering. T2SL IR detectors have higher theoretically-predicted performance than HgCdTe IR detectors, and are commonly considered to be the most promising alternative for the state-of-the-art HgCdTe IR detectors. T2SL IR detectors have experienced significant progress over past few years, in areas of material epitaxy, band structure design, and device processing methods. On basis of summarizing and analyzing literature recently published, this paper presents the development history, current status and advanced technologies of T2SL IR detectors. We firstly introduce the T2SL material, working principle and its advantages. Then we review several band structures and advances of T2SL IR detectors in some famous research institutes. Finally, advanced T2SL technologies are presented, such as HOT (high-operating-temperature), dual-color and small SWaP (Size, Weight and Power) T2SL IR detectors.
Based on the working mechanism and characteristics of spaceborne hyperspectral Fourier transform infrared spectrometer, the computer and software were used as data acquisition and processing tools in this paper to study and simulate the various processes in photoelectric information processing of spectrometer. Analytical models including functional modules such as interference signal generation, effective signal detection, spectral data inversion and instrument error correction was established, then a visualization software system was developed. Finally, the accuracy of the model was calculated and optimized with experiments, the verification results show that this resolving system can process the interference data with high spectral resolution non-destructively, significantly improve the smoothness of the restored spectrum without distortion, and the measured spectral resolution of an instrument is better than 0.03cm-1 . This digital model could provide useful support for the design and parameter optimization of the aerospace Fourier transform infrared spectrometer.
The Low level light sensor has evolved from early ICCD device to EMCCD that appeared at the beginning of this century. With the continuous progress of CMOS technology, the scientific CMOS sensors were developed, which have been used for industrial cameras in high sensitivity imaging. This article described a low level light CMOS detector and its associated camera, which were developed by Beijing Institute of Space Mechanics and Electricity (BISME) in cooperation with a domestic detector manufacturer. We had an in-depth discussion of the chip's high sensitivity design techniques and analyze the weak charge transfer optimization mechanism. Then both the CMOS and EMCCD detector were combined with lens and video processing circuits to conduct a laboratorial test, finally low light detection performance of them were compared and analyzed. The SNR of CMOS imaging circuits was basically equal to the EMCCD imaging circuits when the camera's entrance pupil radiance was less than 0.5E-05 W/m2 /sr, when the radiance was up to 2E-05 W/m2 /sr, the SNR of CMOS circuits was about 2dB better than the EMCCD circuits.
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