We propose a construction and calibration method of an absolute coordinate system for lithography tools. In the conventional overlay control system, subsequent layers are overlaid on the 1st layer that could have unknown wafer distortion. This is inefficient, because the distortion of the 1st layer may be large. A high-level overlay control can be realized with the absolute coordinate system by correcting the 1st layer to zero distortion. This can be possible by using absolute alignment metrology system. In order to confirm our theory, we report experimental results of the absolute grid construction and matching accuracy among multiple lithography tools.
A standalone alignment technology was developed as a fundamental solution to improve on-product overlay (OPO). It enables high performance alignment measurements, and delivers state-of-the-art feed forward corrections to exposure scanner. Dense alignment sampling and high-order field distortion correction is effective for scanner fingerprint matching and for heat related field distortions. A modeling and sampling optimization software is a powerful tool for dense sampling and high-order overlay correction with minimal throughput loss. We performed an overlay experiment using the standalone alignment technology coupled with a modeling and sampling optimization software, which demonstrates on-product overlay improvement potential for next generation manufacturing accuracy and productivity challenges.
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