Mr. Hideo Nakashima Profile

Hideo Nakashima

Vice President at Tokyo Electron Ltd

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Publications (5)

Proceedings Article | 8 April 2019 Paper

PSCAR optimization to reduce EUV resist roughness with sensitization using Resist Formulation Optimizer (RFO)

Seiji Nagahara, Cong Que Dinh, Gosuke Shiraishi, Yuya Kamei, Kathleen Nafus, Yoshihiro Kondo, Michael Carcasi, Yukie Minekawa, Hiroyuki Ide, Yuichi Yoshida, Kosuke Yoshihara, Ryo Shimada, Masaru Tomono, Kazuhiro Takeshita, Serge Biesemans, Hideo Nakashima, Danilo De Simone, John Petersen, Philippe Foubert, Peter De Bisschop, Geert Vandenberghe, Hans-Jürgen Stock, Balint Meliorisz

Proceedings Volume 10960, 109600A (2019) https://doi.org/10.1117/12.2515187

KEYWORDS: Stochastic processes, Calibration, Extreme ultraviolet, Line edge roughness, 3D modeling, Extreme ultraviolet lithography, Switching

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Proceedings Article | 27 March 2018 Presentation + Paper

EUV resist sensitization and roughness improvement by PSCAR with in-line UV flood exposure system

Seiji Nagahara, Michael Carcasi, Gosuke Shiraishi, Yuya Kamei, Kathleen Nafus, Yukie Minekawa, Hiroyuki Ide, Yoshihiro Kondo, Takahiro Shiozawa, Keisuke Yoshida, Masashi Enomoto, Kosuke Yoshihara, Hideo Nakashima, Serge Biesemans, Ryo Shimada, Masaru Tomono, Kazuhiro Takeshita, Teruhiko Moriya, Hayakawa Makoto, Ryo Aizawa, Yoshitaka Konishi, Masafumi Hori, Ken Maruyama, Hisashi Nakagawa, Masayuki Miyake, Tomoki Nagai, Satoshi Dei, Takehiko Naruoka, Motoyuki Shima, Toru Kimura, Geert Vandenberghe, John Petersen, Danilo De Simone, Foubert Philippe, Hans-Jürgen Stock, Balint Meliorisz, Akihiro Oshima, Seiichi Tagawa

Proceedings Volume 10586, 1058606 (2018) https://doi.org/10.1117/12.2297498

KEYWORDS: Ultraviolet radiation, Floods, Picosecond phenomena, Extreme ultraviolet lithography, Calibration, Extreme ultraviolet, Chemically amplified resists, Polymers, Image enhancement, Absorption

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Proceedings Article | 27 March 2018 Presentation + Paper

Constructing a robust PSCAR process for EUV

Michael Carcasi, Seiji Nagahara, Gosuke Shiraishi, Yukie Minekawa, Hiroyuki Ide, Yoshihiro Kondo, Kosuke Yoshihara, Masaru Tomono, Ryo Shimada, Kazuhiro Takeshita, Teruhiko Moriya, Yuya Kamei, Kathleen Nafus, Serge Biesemans, Hideo Nakashima, Masafumi Hori, Ken Maruyama, Hisashi Nakagawa, Tomoki Nagai, Satoshi Dei, Masayuki Miyake, Takehiko Naruoka, Motoyuki Shima, Geert Vandenberghe, Danilo De Simone, Philippe Foubert, John Petersen, Akihiro Oshima, Seiichi Tagawa

Proceedings Volume 10583, 105831M (2018) https://doi.org/10.1117/12.2297370

KEYWORDS: Ultraviolet radiation, Extreme ultraviolet lithography, Extreme ultraviolet, Absorbance, Optical lithography, Absorption, Line edge roughness, Picosecond phenomena, Chemically amplified resists, Image processing

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Proceedings Article | 27 March 2017 Presentation + Paper

Photosensitized Chemically Amplified Resist (PSCAR) 2.0 for high-throughput and high-resolution EUV lithography: dual photosensitization of acid generation and quencher decomposition by flood exposure

Seiji Nagahara, Michael Carcasi, Gosuke Shiraishi, Hisashi Nakagawa, Satoshi Dei, Takahiro Shiozawa, Kathleen Nafus, Danilo De Simone, Geert Vandenberghe, Hans-Jürgen Stock, Bernd Küchler, Masafumi Hori, Takehiko Naruoka, Tomoki Nagai, Yukie Minekawa, Tomohiro Iseki, Yoshihiro Kondo, Kosuke Yoshihara, Yuya Kamei, Masaru Tomono, Ryo Shimada, Serge Biesemans, Hideo Nakashima, Philippe Foubert, Elizabeth Buitrago, Michaela Vockenhuber, Yasin Ekinci, Akihiro Oshima, Seiichi Tagawa

Proceedings Volume 10146, 101460G (2017) https://doi.org/10.1117/12.2258217

KEYWORDS: Extreme ultraviolet lithography, Chemically amplified resists, Floods, Lithography, Extreme ultraviolet, Line edge roughness, Image processing, Image enhancement, Ultraviolet radiation, Scanners, Picosecond phenomena, Polymers, Line width roughness, Stochastic processes

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Proceedings Article | 22 March 2016 Paper

Challenge toward breakage of RLS trade-off for EUV lithography by Photosensitized Chemically Amplified Resist (PSCAR) with flood exposure

Seiji Nagahara, Michael Carcasi, Hisashi Nakagawa, Elizabeth Buitrago, Oktay Yildirim, Gosuke Shiraishi, Yuichi Terashita, Yukie Minekawa, Kosuke Yoshihara, Masaru Tomono, Hironori Mizoguchi, Joel Estrella, Tomoki Nagai, Takehiko Naruoka, Satoshi Dei, Masafumi Hori, Akihiro Oshima, Michaela Vockenhuber, Yasin Ekinci, Marieke Meeuwissen, Coen Verspaget, Rik Hoefnagels, Gijsbert Rispens, Raymond Maas, Hideo Nakashima, Seiichi Tagawa

Proceedings Volume 9776, 977607 (2016) https://doi.org/10.1117/12.2219433

KEYWORDS: Floods, Picosecond phenomena, Extreme ultraviolet, Ultraviolet radiation, Extreme ultraviolet lithography, Line edge roughness, Polymers, Absorption, Line width roughness, Image processing

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This paper proposes a promising approach to break the resolution (R), line-edge-roughness (LER), and sensitivity (S) trade-off (RLS trade-off) relationships that limit the ultimate lithographic performance of standard chemically amplified resists (CAR). This is accomplished in a process that uses a Photosensitized Chemically Amplified Resist (PSCAR) in combination with a flood-exposure in an in-line track connected to a pattern exposure tool. PSCAR is a modified CAR which contains a photosensitizer precursor (PP) in addition to other standard CAR components such as a protected polymer, a photo acid generator (PAG) and a quencher. In this paper, the PSCAR concept and the required conditions in resist formulation are carefully explained. In the PSCAR process, the sensitivity improvement is accomplished by PAG decomposition to selectively generate more acid at the pattern exposed areas during the flood exposure. The selective photosensitization happens through the excitation of the photosensitizer (PS) generated by the deprotection of the PP at the pattern exposed areas. A higher resist chemical gradient which leads to an improved resolution and lower LER values is also predicted using the PSCAR simulator. In the PSCAR process, the improved chemical gradient can be realized by dual acid quenching steps with the help of increased quencher concentration. Acid quenching first happens simultaneously with acid catalytic PP to PS reactions. As a result, a sharpened PS latent image is created in the PSCAR. This image is subsequently excited by the flood exposure creating additional acid products at the pattern exposed areas only. Much the same as in the standard CAR system, unnecessary acid present in the non-pattern exposed areas can be neutralized by the remaining quencher to therefore produce sharper acid latent images. EUV exposure results down to 15 nm half pitch (HP) line/space (L/S) patterns using a PSCAR resist indicate that the use of PSCAR has the potential to improve the sensitivity of the system while simultaneously improving the line-width-roughness (LWR) with added quencher and flood exposure doses. In addition, improved across-wafer critical dimension uniformity (CDU) is realized by the use of a PSCAR in combination with a flood exposure using pre α UV exposure module.

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