Leading edge photomasks require tighter accuracy than ever as wafer lithography advances to EUV and High-NA EUV. To expand process margin by photomask quality improvement, the CD uniformity and the small LER are important. To improve them for small patterns, dose correction as short range correction is more effective than geometry correction. Pixel Level Dose Correction (PLDC) is the dose correction capable of short range correction, and is developed and implemented as inline correction system for multi-beam mask writer MBM series from NuFlare Technology, Inc. To confirm mask quality improvement by PLDC, small patterns are printed on low sensitivity pCAR. 1D line patterns and contact patterns which suffers line edge roughness, showed improvements in LER and LCDU by edge dose enhancement by PLDC. Wafer printability simulation showed that PLDC improved LCDU same as mask patterning.
The high-throughput EBM-mask writer, EBM-8000P has been developed for mature node mask market. The EBM-8000P inherits basic architectures from the previous EBM-8000 system, i.e. electron optics with 50kV acceleration voltage, 400A/cm2 current density, variable shaped beam (VSB), and also, user interface such as JOB control system, mask handling system, which are equivalent to our latest single electron beam mask writers.
The EBM-8000P has two models, the EBM-8000P/H, which is equivalent to the conventional EBM-8000, and the EBM-8000P/M, which aims for high throughput.
The mask-writing throughput depends largely on the beam shot size and the current density, based on the generation of mask nodes. The EBM-8000P/M achieves high throughput and enough accuracy for 45-20 node by enlarging the maximum shot size while maintaining a current density of 400A/cm2.
Therefore, it is possible to achieve throughput that is 1.5 to 2 times faster than the conventional 70A/cm2 mask writer (such as EBM-6000) which is for 45-20nm node.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.