We proposed a dual-wavelength (DW) DFB semiconductor laser with an integrated grating reflector (GR). The proposed laser is based on the reconstruction-equivalent-chirp technique which can be realized easily with high precision. The GR section can provide reflection for the DW-DFB laser. Utilizing the proposed method, higher output power, lower threshold current and larger sidemode suppression ratio (SMSR) can be achieved.
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