Antimonide high-power semiconductor laser diodes emitting at 2μm have broad prospects in many fields, such as tunable diode laser absorption spectroscopy. However, power is an important indicator for the application of antimonide semiconductor laser diodes. In this paper, we reported the high-power antimony laser diodes emitting around 2μm achieved in our group. The maximum optical power is 1.001W with injected current 3.04A at working temperature 20℃.
KEYWORDS: Semiconductor lasers, Antimony, High power lasers, Semiconducting wafers, Epitaxy, Scanning electron microscopy, Quantum technologies, Quantum numbers, Fabrication, Windows
Antimony laser diodes emitting at 2 μm have shown great potential due to the extraordinary performance in gas detecting and other promising fields. However, it is difficult to increase the power of antimony laser diodes, the applications of which would be restricted greatly. In this paper, we report the watt-level antimony laser diodes emitting at 2 μm developed by our group, and the maximum output power can achieve about 1.082W at 20℃ with the injection current set as 5A, showing excellent performance.
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