Prof. Zetian Mi Profile

Prof. Zetian Mi

Professor at Univ of Michigan

SPIE Involvement:

Conference Program Committee | Author | Editor

Publications (33)

Proceedings Article | 9 March 2024 Presentation

Ferroelectric nitride heterostructures and nanostructures for applications in quantum photonics and electronics

Zetian Mi

Proceedings Volume PC12895, PC128950U (2024) https://doi.org/10.1117/12.3001712

KEYWORDS: Heterojunctions, Quantum photonics, Quantum electronics, Photonic nanostructures, Quantum properties, Semiconductors, Scandium, Yttrium, Quantum technology applications, Quantum devices

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Proceedings Article | 17 March 2023 Presentation

N-Polar InGaN nanowires for high efficiency red micro-LEDs

Yakshita Malhotra, Ayush Pandey, Ping Wang, Kai Sun, Xianhe Liu, Zetian Mi

Proceedings Volume PC12430, PC1243006 (2023) https://doi.org/10.1117/12.2643288

KEYWORDS: Nanowires, Indium gallium nitride, Light emitting diodes, Virtual reality, Sapphire, Quantum wells, Quantum efficiency, Heterojunctions, External quantum efficiency, Augmented reality

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Proceedings Article | 17 March 2023 Presentation

ScAlN integrated quantum photonics

Zetian Mi

Proceedings Volume PC12430, PC1243001 (2023) https://doi.org/10.1117/12.2646611

KEYWORDS: Photonics, Aluminum nitride, Waveguides, Ultraviolet radiation, Scandium, Resonators, Optoelectronics, Integration, Photonic crystals, Nonlinear optics

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Proceedings Article | 1 March 2019 Presentation + Paper

Enhanced optical and structural properties of MBE-grown AlGaN nanowires on Si substrate by H-ion implantation and UV ozone treatment

Raman Kumar, Ravinder Kumar, Debiprasad Panda, Mahitosh Biswas, Sourabh Upadhyay, Debabrata Das, Songrui Zhao, Zetian Mi, Subhananda Chakrabarti

Proceedings Volume 10918, 109180A (2019) https://doi.org/10.1117/12.2508490

KEYWORDS: Nanowires, Ultraviolet radiation, Silicon, Ozone, Ion implantation, Scanning electron microscopy, Molecular beam epitaxy

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Proceedings Article | 19 April 2017 Presentation

Electrical and optical properties of flexible nanowire blue light-emitting diodes under mechanical bending (Conference Presentation)

Mohsen Asad, Renjie Wang, Yong-Ho Ra, William Wong, Zetian Mi

Proceedings Volume 10104, 101040P (2017) https://doi.org/10.1117/12.2254543

KEYWORDS: Nanowires, Internal quantum efficiency, Flexible circuits, Indium gallium nitride, Light emitting diodes, Sapphire, Laser bonding, Blue light emitting diodes, Positron emission tomography, Optical properties

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Proceedings Article | 26 February 2016 Paper

Tunable, full-color nanowire light emitting diode arrays monolithically integrated on Si and sapphire

Renjie Wang, Yong-Ho Ra, Yuanpeng Wu, Songrui Zhao, Hieu P. T. Nguyen, Ishiang Shih, Zetian Mi

Proceedings Volume 9748, 97481S (2016) https://doi.org/10.1117/12.2213741

KEYWORDS: Nanowires, Light emitting diodes, Silicon, RGB color model, Sapphire, Indium gallium nitride, Semiconducting wafers, Quantum dot light emitting diodes, Gallium, Chemical species

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Proceedings Article | 5 September 2015 Open Access

Synchrotron-based spectroscopy for solar energy conversion

F. Himpsel, P. Cook, I. Zegkinoglou, Idris Boukahil, R. Qiao, W. Yang, S. C. Pemmaraju, D. Prendergast, C. Kronawitter, M. G. Kibria, Zetian Mi, L. Vayssieres

Proceedings Volume 9560, 95600G (2015) https://doi.org/10.1117/12.2187038

KEYWORDS: Solar energy, Photons, X-rays, Chemical species, Molecules, Absorption, Chemical elements, Photovoltaics, Absorption spectroscopy, Nanowires

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Proceedings Article | 13 March 2015 Paper

Ultralow threshold electrically injected AlGaN nanowire ultraviolet lasers on Si

K. H. Li, X. Liu, S. Zhao, Q. Wang, Z. Mi

Proceedings Volume 9363, 93631D (2015) https://doi.org/10.1117/12.2080116

KEYWORDS: Silicon, Ultraviolet radiation, Semiconductor lasers, Laser damage threshold, Laser applications, Aluminum, Light scattering, Cladding, Random lasers, Nanowires

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Proceedings Article | 9 March 2015 Paper

High-power phosphor-free InGaN/AlGaN dot-in-a-wire core-shell white light-emitting diodes

Hieu Nguyen, Mehrdad Djavid, Steffi Woo, Xianhe Liu, Qi Wang, Gianluigi Botton, Zetian Mi

Proceedings Volume 9383, 938307 (2015) https://doi.org/10.1117/12.2084777

KEYWORDS: Light emitting diodes, Heterojunctions, Quantum dots, Luminescence, External quantum efficiency, Gallium nitride, Silicon, Indium gallium nitride, Quantum wells, Nanowires

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Proceedings Article | 27 February 2015 Paper

High efficiency AlGaN deep ultraviolet light emitting diodes on silicon

Zetian Mi, Songrui Zhao, Ashfiqua Connie, Mohammad Hadi Tavakoli Dastjerdi

Proceedings Volume 9373, 937306 (2015) https://doi.org/10.1117/12.2087050

KEYWORDS: Aluminum nitride, Light emitting diodes, Magnesium, Deep ultraviolet, Silicon, Doping, Edge emitting semiconductor lasers, Gallium nitride, Aluminum, Nanowires

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Proceedings Article | 8 March 2014 Paper

p-Type InN nanowires: towards ultrahigh speed nanoelectronics and nanophotonics

Songrui Zhao, Zetian Mi, Binh Huy Le

Proceedings Volume 8986, 898617 (2014) https://doi.org/10.1117/12.2040847

KEYWORDS: Indium nitride, Magnesium, Transistors, Temperature metrology, Doping, Nanoelectronics, Nanophotonics, X-rays, Optoelectronic devices, Nanowires

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Proceedings Article | 27 February 2014 Paper

Phosphor-free InGaN/GaN/AlGaN core-shell dot-in-a-wire white light-emitting diodes

Zetian Mi, Hieu Nguyen, Shaofei Zhang, Ashfiqua Connie, Md Kibria, Qi Wang, Ishiang Shih

Proceedings Volume 9003, 900306 (2014) https://doi.org/10.1117/12.2041284

KEYWORDS: Light emitting diodes, Quantum wells, Indium gallium nitride, Quantum efficiency, Silicon, Heterojunctions, Gallium nitride, Lithium, Luminescence, Nanowires

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Proceedings Article | 19 February 2014 Paper

Molecular beam epitaxial growth and characterization of intrinsic and p-type InN nanowires

Zetian Mi, Songrui Zhao, Binh Huy Le, Omid Salehzadeh, Shima Alagha, Karen Kavanagh, Simon Watkins

Proceedings Volume 8996, 899602 (2014) https://doi.org/10.1117/12.2038663

KEYWORDS: Indium nitride, Magnesium, Temperature metrology, Silicon, Molecular beams, Transistors, Doping, Semiconductors, Electron transport, Nanowires

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Proceedings Article | 11 October 2013 Paper

Modeling a monocrystalline Cu(In,Ga)Se2 single junction solar cell grown on a GaAs substrate

F. Bouchard, A. Walker, Z. Mi, K. Hinzer

Proceedings Volume 8915, 891507 (2013) https://doi.org/10.1117/12.2036189

KEYWORDS: Copper indium gallium selenide, Solar cells, Gallium arsenide, Interfaces, Gallium, Device simulation, Absorption, External quantum efficiency, Photovoltaics, Solar energy

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SPIE Journal Paper | 20 September 2013 Open Access

Review of recent progress of III-nitride nanowire lasers

Shamsul Arafin, Xianhe Liu, Zetian Mi

JNP, Vol. 7, Issue 01, 074599, (September 2013) https://doi.org/10.1117/12.10.1117/1.JNP.7.074599

KEYWORDS: Gallium nitride, Semiconductor lasers, Laser damage threshold, Silicon, Plasmonics, Polaritons, Resonators, Optical pumping, Nanowires, Nanorods

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Proceedings Article | 29 March 2013 Paper

Molecular beam epitaxial growth and characterization of InGaN/GaN dot-in-a-wire nanoscale heterostructures: toward ultrahigh efficiency phosphor-free white light emitting diodes

Zetian Mi, Hieu Pham Trung Nguyen, Shaofei Zhang, Kai Cui, Mehrdad Djavid

Proceedings Volume 8634, 86340B (2013) https://doi.org/10.1117/12.2004498

KEYWORDS: Light emitting diodes, Heterojunctions, Internal quantum efficiency, External quantum efficiency, Quantum efficiency, Molecular beams, Gallium nitride, Quantum dots, Solid state lighting, Nanowires

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Proceedings Article | 19 September 2011 Paper

Binding sites of water molecules on GaN (100) surface: DFT calculations

Dongping Liu, Yu Zhu, Hong Guo, Hakima Abou-Rachid, Mounir Jaidann, Zetian Mi

Proceedings Volume 8109, 81090H (2011) https://doi.org/10.1117/12.912714

KEYWORDS: Gallium nitride, Chemical species, Molecules, Adsorption, Hydrogen, Gallium, Metals, Crystals, Nitrogen, Platinum

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Proceedings Article | 8 September 2011 Paper

Growth of large crystalline CuInSe2 ingots

Julia Qiu, Andy Shih, Yi Fan Qi, Sunyoung Park, Zetian Mi, Ishiang Shih

Proceedings Volume 8007, 80071T (2011) https://doi.org/10.1117/12.902333

KEYWORDS: Selenium, Crystals, Indium, Copper, Quartz, Chemical elements, Temperature metrology, Solids, Absorption, Photons

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Proceedings Article | 8 September 2011 Paper

Metal contacts to p-type crystalline CuInSe2

Sunyoung Park, Clifford Champness, Zetian Mi, Ishiang Shih

Proceedings Volume 8007, 80071X (2011) https://doi.org/10.1117/12.905162

KEYWORDS: Resistance, Metals, Crystals, Copper, Heat treatments, Nickel, Platinum, Selenium, Gold, Silver

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Proceedings Article | 17 January 2011 Paper

Self-organized InAs quantum dot tube lasers and integrated optoelectronics on Si

Zetian Mi, Pablo Bianucci, Feng Li, Zhaobing Tian, Venkat Veerasubramanian, Andrew Kirk, David Plant, Philip Poole

Proceedings Volume 7943, 79431C (2011) https://doi.org/10.1117/12.876172

KEYWORDS: Waveguides, Quantum dots, Silicon, Semiconductor lasers, Resonators, Semiconductors, Gallium arsenide, Indium arsenide, Optical properties, Optoelectronics

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SPIE Journal Paper | 1 January 2011

Controlling optical properties and surface morphology of dry etched porous silicon

Maurice Cheung, Philip Roche, Mohamad Hajj-Hassan, Andrew Kirk, Zetian Mi, Vamsy Chodavarpu

JNP, Vol. 5, Issue 01, 053503, (January 2011) https://doi.org/10.1117/12.10.1117/1.3571270

KEYWORDS: Silicon, Etching, Reflectivity, Scanning electron microscopy, Optical properties, Semiconducting wafers, Dry etching, Scattering, Interfaces, Oxides

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SPIE Journal Paper | 1 January 2011

Errata: Controlling optical properties and surface morphology of dry etched porous silicon

Andrew Kirk, Maurice Cheung, Philip Roche, Mohamad Hajj-Hassan, Zetian Mi, Vamsy Chodavarapu

JNP, Vol. 5, Issue 01, 050102, (January 2011) https://doi.org/10.1117/12.10.1117/1.3592487

Proceedings Article | 16 November 2010 Paper

Prospects and challenges of InN-based nanowire heterostructures and devices integrated on Si

Z. Mi, H. Nguyen, K. Cui, X. Han, S. Zhang, Y.-L. Chang

Proceedings Volume 7847, 784702 (2010) https://doi.org/10.1117/12.870760

KEYWORDS: Indium nitride, Heterojunctions, Solar cells, Light emitting diodes, Silicon, Luminescence, Molecular beams, Indium gallium nitride, Nitrogen, Nanowires

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Proceedings Article | 12 March 2010 Paper

Molecular beam epitaxial growth, fabrication, and characterization of InN/Si nanowire heterojunction solar cells

Yi-Lu Chang, Zetian Mi

Proceedings Volume 7602, 76020A (2010) https://doi.org/10.1117/12.843258

KEYWORDS: Indium nitride, Solar cells, Heterojunctions, Silicon, Indium gallium nitride, Molecular beams, Photovoltaics, Solar energy, Nitrogen, Nanowires

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Proceedings Article | 16 February 2010 Paper

Multiwavelength rolled-up InGaAs/GaAs quantum dot microtube lasers

F. Li, Z. Mi

Proceedings Volume 7591, 75910O (2010) https://doi.org/10.1117/12.843255

KEYWORDS: Quantum dots, Resonators, Optical pumping, Gallium arsenide, Heterojunctions, Laser damage threshold, Semiconductors, Indium gallium arsenide, Etching, Scanning electron microscopy

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Proceedings Article | 18 February 2009 Paper

Self-assembled InGaAs/GaAs quantum dot microtube coherent light sources on GaAs and silicon

Z. Mi, S. Vicknesh, F. Li, P. Bhattacharya

Proceedings Volume 7220, 72200S (2009) https://doi.org/10.1117/12.810117

KEYWORDS: Quantum dots, Silicon, Gallium arsenide, Resonators, Quantum optics, Scanning electron microscopy, Semiconductors, Heterojunctions, Etching, Luminescence

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SPIE Journal Paper | 1 January 2009

III-V compound semiconductor nanostructures on silicon: epitaxial growth, properties, and applications in light emitting diodes and lasers

Zetian Mi, Yi-Lu Chang

JNP, Vol. 3, Issue 01, 031602, (January 2009) https://doi.org/10.1117/12.10.1117/1.3081051

KEYWORDS: Silicon, Quantum dots, Heterojunctions, Light emitting diodes, Semiconductor lasers, Indium arsenide, Quantum dot lasers, Gallium arsenide, Luminescence, Nanowires

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Proceedings Article | 10 September 2007 Paper

High performance long wavelength quantum dot lasers on GaAs

P. Bhattacharya, Z. Mi

Proceedings Volume 6779, 677908 (2007) https://doi.org/10.1117/12.731791

KEYWORDS: Gallium arsenide, Gallium, Indium arsenide, Heterojunctions, Quantum dot lasers, Modulation, Laser damage threshold, Indium gallium arsenide, Aluminum, Temperature metrology

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Proceedings Article | 8 February 2007 Paper

Quantum dot lasers and integrated guided wave devices on Si

Jun Yang, Zetian Mi, Pallab Bhattacharya

Proceedings Volume 6485, 648514 (2007) https://doi.org/10.1117/12.714262

KEYWORDS: Silicon, Quantum dots, Semiconductor lasers, Gallium arsenide, Indium arsenide, Waveguides, Modulators, Quantum wells, Gallium, Quantum dot lasers

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Proceedings Article | 1 March 2006 Paper

High-performance self-organized In(Ga)As quantum dot lasers monolithically grown on silicon

Z. Mi, J. Yang, P. Bhattacharya, P. Chan, K. Pipe

Proceedings Volume 6125, 612506 (2006) https://doi.org/10.1117/12.644289

KEYWORDS: Silicon, Quantum dots, Gallium arsenide, Indium arsenide, Semiconductor lasers, Optical filters, Gallium, Laser damage threshold, Temperature metrology, Heterojunctions

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Proceedings Article | 22 February 2006 Paper

High performance 1.3µm quantum dot lasers on GaAs and Silicon

P. Bhattacharya, Z. Mi, J. Yang, S. Fathpour

Proceedings Volume 6133, 61330U (2006) https://doi.org/10.1117/12.641472

KEYWORDS: Gallium arsenide, Silicon, Quantum dots, Semiconductor lasers, Indium arsenide, Quantum dot lasers, Laser damage threshold, Gallium, Modulation, Temperature metrology

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Proceedings Article | 28 April 2005 Paper

Temperature dependent output characteristics of p-doped 1.1 and 1.3 µm quantum dot lasers

Z. Mi, S. Fathpour, P. Bhattacharya, A. Kovsh, S. Mikhrin, I. Krestnikov, A. Kozhukhov, N. Ledentsov

Proceedings Volume 5722, (2005) https://doi.org/10.1117/12.589891

KEYWORDS: Quantum dot lasers, Modulation, Laser damage threshold, Gallium, Quantum dots, Temperature metrology, Gallium arsenide, Electrons, Heterojunctions, Measurement devices

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Proceedings Article | 11 May 2004 Paper

Quantum dot intersublevel light emitters

Pallab Bhattacharya, Carl Fischer, Sanjay Krishna, Zetian Mi, Xiaohua Su

Proceedings Volume 5365, (2004) https://doi.org/10.1117/12.529064

KEYWORDS: Quantum dots, Gallium arsenide, Heterojunctions, Infrared radiation, Quantum wells, Light sources, Electroluminescence, Photons, Gallium, Far infrared

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