Dr. Alain Hoffmann Profile

Dr. Alain Hoffmann

at Univ Montpellier

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Author

Publications (4)

Proceedings Article | 23 May 2005 Paper

Trap competition inducing R.T.S noise in saturation range in N-MOSFETs

C. Leyris, A. Hoffmann, M. Valenza, J.-C. Vildeuil, F. Roy

Proceedings Volume 5844, (2005) https://doi.org/10.1117/12.609375

KEYWORDS: Oxides, Field effect transistors, Silicon, Signal to noise ratio, Switching, Instrument modeling, Transistors, Molybdenum, Interference (communication), Switches

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Proceedings Article | 25 May 2004 Paper

1/f noise in GaN/AlGaN heterostructure field effect transistors under condition of strong geometric magnetoresistance

Sergey Rumyantsev, Michael Shur, Wojciech Knap, Nina Dyakonova, Fabien Pascal, Alain Hoffman, Y. Ghuel, C. Gaquiere, D. Theron

Proceedings Volume 5470, (2004) https://doi.org/10.1117/12.546748

KEYWORDS: Magnetism, Resistance, Field effect transistors, Heterojunctions, Gallium nitride, Transistors, Aluminum nitride, Temperature metrology, Gallium arsenide, Metalorganic chemical vapor deposition

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Proceedings Article | 12 May 2003 Paper

Discussion on standard 1/f noise models in software packages: SPICE, HSPICE and BSIM3v3--comparison to MOSFET noise data on commercial c025

Matteo Valenza, Alain Hoffmann, Frederic Martinez, A. Laigle, Joseph Rhayem, R. Gillon, Marnix Tack

Proceedings Volume 5113, (2003) https://doi.org/10.1117/12.497578

KEYWORDS: Data modeling, Field effect transistors, Atrial fibrillation, Instrument modeling, Silicon, Analog electronics, Solid modeling, Device simulation, Semiconductors, Transistors

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Proceedings Article | 12 May 2003 Paper

Impact of scaling down on 1/f noise in MOSFETs

Matteo Valenza, Alain Hoffmann, Arnaud Laigle, Dominique Rigaud, Mathieu Marin

Proceedings Volume 5113, (2003) https://doi.org/10.1117/12.492906

KEYWORDS: Oxides, Field effect transistors, Transistors, Molybdenum, Silicon, Instrument modeling, Amplifiers, CMOS technology, Dielectrics, Remote sensing

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